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Effects of Various Types of Doping on the Electronic Structure of Organic Interfaces

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Abstract

In various organic electronic devices, interfaces formed by organic layers can play important roles. We have been studying various organic interfaces for clarifying their structure and electronic structure. In this talk, we will report our recent study of the effect of various types of doping for a variety of dopants – residual impurity, atmospheric gases, and metallic and organic intentional dopants. In particular, detailed and quantitative information about the effect of oxygen from the viewpoint of electronic structure was obtained for titanyl phthalocyanine (TiOPc), and the results corresponded well with the recent report of atmospheric effect on orga nic field effect transistor.

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Authors and Affiliations

  1. Research Center for Materials Science, Nagoya University, Furocho, Chikusa-ku, Nagoya, 464-8602, Japan

    Kazuhiko Seki

  2. Research Institute for Advanced Research, Nagoya University, Furocho, Chikusa-ku, Nagoya, 464-8602, Japan

    Kazuhiko Seki

  3. Department of Chemistry, Graduate School of Science, Nagoya University, Furocho, Chikusa-ku, Nagoya, 464-8602, Japan

    Toshio Nishi, Senku Tanaka, Tadanobu Ikame & Kaname Kanai

  4. Research Institute for Electro Communication, Katahira, Aoba-ku, Sendai, 980-8577, Japan

    Hisao Ishii

Authors
  1. Kazuhiko Seki
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  2. Toshio Nishi
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  3. Senku Tanaka
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  4. Tadanobu Ikame
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  5. Hisao Ishii
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  6. Kaname Kanai
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Seki, K., Nishi, T., Tanaka, S. et al. Effects of Various Types of Doping on the Electronic Structure of Organic Interfaces. MRS Online Proceedings Library 871, 811 (2005). https://doi.org/10.1557/PROC-871-I8.11

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  • DOI: https://doi.org/10.1557/PROC-871-I8.11

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