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MBE Growth of GaAs on Porous Silicon

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Abstract

GaAs layers have been grown on porous silicon (PS) substrates by molecular beam epitaxyNo surface morphology deterioration was observed onGaAs-on-PS layers in spite of the roughness of PS. A 10% Rutherford backscattering spectroscopy (RBS) channeling minimum yield for GaAs-on-PS layers as compared to 16% for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy (TEM) reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers.

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Author notes

  1. T. L. Lin

    Present address: Jet Propulsion Laboratory, Pasadena, CA, USA

Authors and Affiliations

  1. Department of Electrical Engineering, University of California, Los Angeles, CA, USA

    T. L. Lin, L. Sadwick, K. L. Wang, S. S. Rhee & Y. C. Kao

  2. Hewlett Packard Research Laboratory, Palo Alto, CA, USA

    R. Hull

  3. California Institute of Technology, Pasadena, CA, USA

    C. W. Nieh, D. N. Jamieson & M.-A. Nicolet

  4. Jet Propulsion Laboratory, Pasadena, CA, USA

    J. K. Liu

Authors
  1. T. L. Lin
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  2. L. Sadwick
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  3. K. L. Wang
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  4. S. S. Rhee
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  5. Y. C. Kao
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  6. R. Hull
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  7. C. W. Nieh
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  8. D. N. Jamieson
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  9. J. K. Liu
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  10. M.-A. Nicolet
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Lin, T.L., Sadwick, L., Wang, K.L. et al. MBE Growth of GaAs on Porous Silicon. MRS Online Proceedings Library 91, 113–118 (1987). https://doi.org/10.1557/PROC-91-113

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  • DOI: https://doi.org/10.1557/PROC-91-113

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