Skip to main content
SpringerLink
Log in

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

  • Functional Oxides Research Letter
  • Published:
MRS Communications Aims and scope Submit manuscript

Abstract

This work reports the growth of crystalline SrHfxTi1-xO3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from -530 °C (x= 0) to -660 °C (x= 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm2 leakage current at 1 MV/cm for x= 0.55.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6

Similar content being viewed by others

References

  1. P.S. Goley and M.K. Hudait: Germanium based field-effect transistors: challenges and opportunities. Materials 7, 2301–2339 (2014).

    Article  CAS  Google Scholar 

  2. E. Simoen, J. Mitard, G. Hellings, G. Eneman, B. De Jaeger, L. Witters, B. Vincent, R. Loo, A. Delabie, S. Sioncke, M. Caymax, and C. Claeys: Challenges and opportunities in advanced Ge pMOSFETs. Mater. Sci. Semicond. Process. 15, 588–600 (2012).

    Article  CAS  Google Scholar 

  3. Y. Kamata: High-k/Ge MOSFETs for future nanoelectronics. Mater. Today 11, 30–38 (2008).

    Article  Google Scholar 

  4. G.D. Wilk, R.M. Wallace, and J.M. Anthony: High-k gate dielectrics: current status and materials properties considerations. J. Appl. Phys. 89, 5243–5275 (2001).

    Article  CAS  Google Scholar 

  5. S. Swaminathan, M. Shandalov, Y. Oshima, and P.C. Mclntyre: Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices. Appl. Phys. Lett. 96, 082904 (2010).

    Article  Google Scholar 

  6. CO. Chui, S. Ramanathan, B.B. Triplett, P.C. Mclntyre, and K.C. Saraswat: Germanium MOS capacitors incorporating ultrathin high-n gate dielectric. IEEE Electron Device Lett. 23, 473–475 (2002).

    Article  CAS  Google Scholar 

  7. Y. Kamata, K. Ikeda, Y. Kamimuta, and T. Tezuka: High-k/Ge p- & n-MISFETs with strontium germanide interlayer for EOT scalable CMIS application. 2010 Symposium on VLSI Technology. IEEE, 2010; pp. 211–212.

    Chapter  Google Scholar 

  8. C.H. Lee, C. Lu, T. Tabata, W.F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi: Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge. Electron Devices Meeting. IEEE, 2013; pp. 2.5.1–2.5.4.

    Google Scholar 

  9. C.H. Lee, C. Lu, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi: Enhancement of high-Ns electron mobility in sub-nm EOT Ge n-MOSFETs. 2013 Symposium on VLSI Technology. IEEE, 2013; pp. T28–T29.

    Google Scholar 

  10. R. Zhang, P.C. Huang, N. Taoka, M. Takenaka, and S. Takagi: High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/AI2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation. 2012 Symposium on VLSI Technology. IEEE, 2012; pp. 161–162.

    Chapter  Google Scholar 

  11. A. Rollett, F.J. Humphreys, G.S. Rohrer, and M. Hatherly: Recrystallization and Related Annealing Phenomena (Elsevier, 2004); pp. 151.

    Google Scholar 

  12. J.W. Reiner, A.M. Kolpak, Y. Segal, K.F. Garrity, S. Ismail-Beigi, C.H. Ahn, and F.J. Walker: Crystalline oxides on silicon. Adv. Mater. 22, 2919–2938 (2010).

    Article  CAS  Google Scholar 

  13. R.A. McKee, F.J. Walker, and M.F. Chisholm: Physical structure and inversion charge at a semiconductor interface with a crystalline oxide. Science 293, 468–471 (2001).

    Article  CAS  Google Scholar 

  14. R.A. McKee, F.J. Walker, and M.F. Chisholm: Crystalline oxides on silicon: the first five monolayers. Phys. Rev. Lett. 81, 3014–3017 (1998).

    Article  CAS  Google Scholar 

  15. M. Jahangir-Moghadam, K. Ahmadi-Majlan, X. Shen, T. Droubay, M. Bowden, M. Chrysler, D. Su, S.A. Chambers, and J.H. Ngai: Band-gap engineering at a semiconductor-crystalline oxide interface. Adv. Mater. Interfaces 2, 1400497 (2015).

    Article  Google Scholar 

  16. A.A. Demkov, A.B. Posadas, H. Seo, M. Choi, K.J. Kormondy, P. Ponath, R.C. Hatch, M.D. McDaniel, T.Q. Ngo, and J.G. Ekerdt: Monolithic integration of oxides on semiconductors. ECS Trans. 54, 255–269 (2013).

    Article  Google Scholar 

  17. M.D. McDaniel, C. Hu, S. Lu, T.Q. Ngo, A. Posadas, A. Jiang, D.J. Smith, E.T. Yu, A.A. Demkov, and J.G. Ekerdt: Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications. J. Appl. Phys. 117, 54101 (2015).

    Article  Google Scholar 

  18. M.D. McDaniel, T.Q. Ngo, A. Posadas, C. Hu, S. Lu, D.J. Smith, E.T. Yu, A. A. Demkov, and J.G. Ekerdt: A chemical route to monolithic integration of crystalline oxides on semiconductors. Adv. Mater. Interfaces 1, 1400081 (2014).

    Article  Google Scholar 

  19. I. Oh, M.-K. Kim, J. Lee, C.-W. Lee, C. Lansalot-Matras, W. Noh, J. Park, A. Noori, D. Thompson, S. Chu, W.J. Maeng, and H. Kim: The effect of La203-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition. Appl. Surf. Sci. 287, 349–354 (2013).

    Article  CAS  Google Scholar 

  20. L. Bjaalie, B. Himmetoglu, L. Weston, A. Janotti, and C.G.V. de Walle: Oxide interfaces for novel electronic applications. New J. Phys. 16, 025005 (2014).

    Article  Google Scholar 

  21. S.A. Chambers, Y. Liang, Z. Yu, R. Droopad and J. Ramdani: Band offset and structure of SrTiO3/Si (001) heterojunctions. J. Vac. Sci. Technol. A 19, 934–939 (2001).

    Article  CAS  Google Scholar 

  22. F. Amy, A.S. Wan, A. Kahn, F.J. Walker, and R.A. McKee: Band offsets at heterojunctions between SrTiO3 and BaTiO3 and Si (100). J. Appl. Phys. 96, 1635–1639 (2004).

    Article  CAS  Google Scholar 

  23. X. Zhang, A.A. Demkov, H. Li, X. Hu, Y. Wei, and J. Kulik: Atomic and electronic structure of the Si/SrTiO3 interface. Phys. Rev. B 68, 125323 (2003).

    Article  Google Scholar 

  24. M.D. McDaniel, A. Posadas, T. Wang, A.A. Demkov, and J.G. Ekerdt: Growth and characterization of epitaxial anatase TiO2(001) on SrTiO3-buffered Si(001) using atomic layer deposition. Thin Solid Films 520, 6525–6530 (2012).

    Article  CAS  Google Scholar 

  25. C.D. Wagner, W.M. Riggs, L.E. Davis, and J.F. Moulder: Handbook of X-ray Photoelectron Spectroscopy edited by G.E. Muilenberg (Perkin-Elmer, Physical Electronics Division, Eden Prairie, MN, 1979); pp. 253.

  26. D. de Ligny and P. Richet: High-temperature heat capacity and thermal expansion of SrTiO3 and SrZrO3 perovskites. Phys. Rev. B 53, 3013–3022 (1996).

    Article  Google Scholar 

  27. H.P. Singh: Determination of thermal expansion of germanium, rhodium and iridium by X-rays. Acta Crystallogr. Sect. A 24, 469–471 (1968).

    Article  CAS  Google Scholar 

  28. S. Yamanaka, T. Maekawa, H. Muta, T. Matsuda, S. Kobayashi, and K. Kurosaki: Thermophysical properties of SrHfO3 and SrRuO3. J. Solid State Chem. 177, 3484–3489 (2004).

    Article  CAS  Google Scholar 

  29. A. Meldrum, L.A. Boatner, W.J. Weber, and R.C. Ewing: Amorphization and recrystallization of the ABO3 oxides. J. Nucl. Mater. 300, 242–254 (2002).

    Article  CAS  Google Scholar 

  30. CM. Brooks, L.F. Kourkoutis, T. Heeg, J. Schubert, D.A. Muller, and D.G. Schlom: Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy. Appl. Phys. Lett. 94, 162905 (2009).

    Article  Google Scholar 

  31. H. Ledbetter, M. Lei, and S. Kim: Elastic constants, debye temperatures, and electron-phonon parameters of superconducting cuprates and related oxides. Phase Transit. 23, 61–70 (1990).

    Article  CAS  Google Scholar 

  32. J.F. Moulder, W.F. Stickle, P.E. Sobol, and K.D. Bomben: Handbook of X-ray Photoelectron Spectroscopy edited by J. Chastain (Perkin-Elmer, Physical Electronics Division, Eden Prairie, MN, 1993).

  33. M.P. Seah and W.A. Dench: Quantitative electron spectroscopy of surfaces: a standard data base for electron inelastic mean free paths in solids. Surf. Interface Anal. 1, 2–11 (1979).

    Article  CAS  Google Scholar 

  34. X. Jiang, R.Q. Zhang, G. Yu, and S.T. Lee: Local strain in interface: origin of grain tilting in diamond (001)/silicon (001) heteroepitaxy. Phys. Rev. B 58, 15351–15354 (1998).

    Article  CAS  Google Scholar 

  35. C.M. Foster, Z. Li, M. Buckett, D. Miller, P.M. Baldo, L.E. Rehn, G.R. Bai, D. Guo, H. You, and K.L. Merkle: Substrate effects on the structure of epitaxial PbTi03 thin films prepared on MgO, LaAIO3, and SrTiO3 by metal-organic chemical-vapor deposition. J. Appl. Phys. 78, 2607–2622 (1995).

    Article  CAS  Google Scholar 

  36. H. Wu, T. Aoki, A.B. Posadas, A.A. Demkov, and D.J. Smith: Anti-phase boundaries at the SrTiO3/Si(001) interface studied using aberration-corrected scanning transmission electron microscopy. Appl. Phys. Lett. 108, 091605 (2016).

    Article  Google Scholar 

  37. K.D. Fredrickson, P. Ponath, A.B. Posadas, M.R. McCartney, T. Aoki, D.J. Smith, and A.A. Demkov: Atomic and electronic structure of the ferroelectric BaTiO3/Ge(001) interface. Appl. Phys. Lett. 104, 242908 (2014).

    Article  Google Scholar 

Download references

Acknowledgments

This researchwas supportedbytheNationalScience Foundation (Award CMMI-1437050) and the Air Force Office of Scientific Research (Grant FA9550-14-1-0090).

Author information

Author notes

  1. Martin D. McDaniel

    Present address: Current Address: Towerjazz Texas, San Antonio, TX, 78251, USA

  2. Chengqing Hu

    Present address: Current Address: Intel Corporation, Chandler, AZ, 85226, USA

Authors and Affiliations

  1. Department of Chemical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA

    Shen Hu & Martin D. McDaniel

  2. Department of Physics, The University of Texas at Austin, Austin, TX, 78712, USA

    Agham Posadas

  3. The University of Texas at Austin, Microelectronics Research Center, Austin, TX, 78758, USA

    Chengqing Hu

  4. Department of Physics, Arizona State University, Tempe, AZ, 85287, USA

    HsinWei Wu

  5. The University of Texas at Austin, Microelectronics Research Center, Austin, TX, 78758, USA

    Edward T. Yu

  6. Department of Physics, Arizona State University, Tempe, AZ, 85287, USA

    David J. Smith

  7. Department of Physics, The University of Texas at Austin, Austin, TX, 78712, USA

    Alexander A. Demkov

  8. Department of Chemical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA

    John G. Ekerdt

Authors
  1. Shen Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Martin D. McDaniel
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Agham Posadas
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Chengqing Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. HsinWei Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Edward T. Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. David J. Smith
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Alexander A. Demkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. John G. Ekerdt
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to John G. Ekerdt.

Additional information

Current Address: Towerjazz Texas, San Antonio, TX 78251, USA.

Current Address: Intel Corporation, Chandler, AZ 85226, USA.

Supplementary Material

Supplementary Material

The supplementary material for this article can be found at http://dx.doi.org/10.1557/mrc.2016.36

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Hu, S., McDaniel, M.D., Posadas, A. et al. Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3. MRS Communications 6, 125–132 (2016). https://doi.org/10.1557/mrc.2016.36

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/mrc.2016.36

Search

Navigation