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Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary

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Abstract

We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

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Authors and Affiliations

  1. Research Center for Applied Sciences, Academia Sinica, 11529, Taipei, Taiwan

    Mei-Chun Liu & Yuh-Jen Cheng

  2. Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300, Hsinchu, Taiwan

    Jet-Rung Chang & Chun-Yen Chang

Authors
  1. Mei-Chun Liu
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  2. Yuh-Jen Cheng
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  3. Jet-Rung Chang
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  4. Chun-Yen Chang
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Liu, MC., Cheng, YJ., Chang, JR. et al. Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary. MRS Online Proceedings Library 1324, 904 (2011). https://doi.org/10.1557/opl.2011.840

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