Nonvolatile Resistive Memory Switching in Amorphous LaGdO₃ Thin Films

Abstract

Nonvolatile unipolar resistive switching properties of the amorphous LaGdO₃ thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO₃ film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 10⁶ and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO₃ film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 10⁴ seconds indicating good retention. The observed resistive switching characteristics of LaGdO₃ thin films are promising for futuristic nonvolatile memories.