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Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

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Abstract

A phenomenological model has been proposed for the radial growth of the copper or silver nanobridge in the conductive bridge random access memory devices. In this model, the growth rate of the bridge is proportional to the local ion flux based on the hopping mechanism. Due to the differences of the local electric field, the growth rate is different along a conical shape nanobridge. The model accounts for the growth rate difference by introducing a geometrical form factor. Based on the model, the top and bottom radii are predicted for truncated conical copper nanobridge. The model is validated with data obtained on Cu/TaOx/Pt resistive devices.

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Authors and Affiliations

  1. Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24061, USA

    Tong Liu, Yuhong Kang, Sarah El-Helw, Tanmay Potnis & Marius Orlowski

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  1. Tong Liu
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  2. Yuhong Kang
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  3. Sarah El-Helw
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  4. Tanmay Potnis
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  5. Marius Orlowski
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Liu, T., Kang, Y., El-Helw, S. et al. Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices. MRS Online Proceedings Library 1562, 1 (2013). https://doi.org/10.1557/opl.2013.826

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  • DOI: https://doi.org/10.1557/opl.2013.826

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