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Influence of Zirconium Nitrate doping on the properties of l-Alanine crystal for nonlinear optical applications

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Abstract

Nonlinear optical single crystals of pure l-Alanine (LA) and Zirconium Nitrate-doped l-Alanine (ZNLA) were grown by low-temperature solution growth slow evaporation technique at room temperature. Single crystal and powder XRD confirms the orthorhombic structure. The average crystallite size and lattice strain are 53.21 nm and 0.0048 for LA and 62.17 nm and 0.0041 for ZNLA. FTIR reveals the presence of functional groups in the grown crystal. The optical analysis confirms the high transparency, the obtained direct and indirect transition bandgap of LA and ZNLA are 5.4 eV, 4.84 eV and 5.32 eV, 4.11 eV. The dielectric constant and dielectric loss of the gown materials are low at high frequencies. The relative second harmonic efficiency of l-Alanine and Zirconium Nitrate-doped l-Alanine are 1.15 and 1.47 times higher than that of KDP. The magnetic parameters were identified with VSM analysis. The thermal stability of LA and ZNLA single crystals was found stable up to 193.5 35 °C and 248.35 °C for ZNLA. Photoconductivity reveals that both the material LA and ZNLA have negative photoconductivity nature.

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Acknowledgements

Authors thank Head, Department of Physics, Alagappa University, Karaikudi for extending the characterization facilities of Powder XRD and also thank The Head, SAIF, IIT, Chennai for UV–visible analysis and VSM analysis.

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Authors and Affiliations

  1. Department of Physics, Periyar University PG Extension Centre, Dharmapuri, Tamil Nadu, 636 701, India

    N. Suresh & M. Selvapandiyan

  2. Department of Physics, Periyar University, Salem, Tamil Nadu, 636 011, India

    N. Suresh

  3. Department of Physics, Sri Vidya Mandir Arts & Science College, Uthangarai, Tamil Nadu, 636 902, India

    N. Suresh

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  1. N. Suresh
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Correspondence to M. Selvapandiyan.

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Suresh, N., Selvapandiyan, M. Influence of Zirconium Nitrate doping on the properties of l-Alanine crystal for nonlinear optical applications. J Mater Sci: Mater Electron 31, 16737–16745 (2020). https://doi.org/10.1007/s10854-020-04229-2

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