Abstract
The growth kinetics is characterized and the moving species is identified for the formation of Ni2Si by Rapid Thermal Annealing (RTA) of sequentially deposited Si and Ni films on a 〈100〉 Si substrate. The interfacial Ni2Si layer grows as the square root of time, indicating that the suicide growth process is diffusion-limited. The activation energy is 1.25±0.2 eV in the RTA temperature range of 350–450° C. The results extend those of conventional steady-state furnace annealing quite fittingly, and a common activation energy of 1.3±0.2 eV is deduced from 225° to 450° C. The marker experiment shows that Ni is the dominant moving species during Ni2Si formation by RTA, as is the case for furnace annealing. It is concluded that the two annealing techniques induce the same growth mechanisms in Ni2Si formation.
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References
S.P. Murarka: InSilicides for VLSI Applications (Academic, New York 1983) Chap. 4
M-A. Nicolet, S.S. Lau: InVLSI Electronics: Microstructure Science, Materials and Process Characterization, Vol. 6, ed. by N.G. Einspruch and G.B. Larrabee (Academic, New York 1983) Chap. 6
T.O. Sedgwick: J. Electrochem. Soc.130, 484 (1983)
S.R. Wilson, W.M. Paulson, R.B. Gregory, A.H. Hamdi, F.D. McDaniel: J. Appl. Phys.55, 416 (1984)
For a review, see F.M. d'Heurle, R.T. Hodgson, C.Y. Ting: InRapid Thermal Processing, ed. by T.O. Sedgewick, T.E. Seidel and B.-Y. Tsaur,Mat. Res. Soc. Symp. Proc. 52, 261 (Philadelphia, Pa1986)
D. Levy, A. Grob, J.J. Grob, J.P. Ponpon: Appl. Phys. A35, 141 (1984)
C.S. Wei, J. Van der Spiegel, J. Santiago: J. Electrochem. Soc. (to be published)
C.G. Hopkins, S.M. Baumann, R.J. Blattner: InThin Films and Interfaces II, ed. by J.E.E. Baglin, D.R. Cambell and W.K. Chu,Mat. Res. Soc. Symp. Proc. 25, 87 (Elsevier, New York 1984)
D. Levy, J.P. Ponpon, A. Grob, J.J. Grob, P. Siffert: Physica B129, 205 (1985)
T. Okamoto, K. Tsukamoto, M. Shimizu, T. Matsukawa: J. Appl. Phys.57, 2551 (1985)
C.S. Wei, J. Van der Spiegel, J. Santiago, L.E. Seiberling: InEnergy Beam-Solid Interactions and Transient Thermal Processing, ed. by D.K. Biegelsen, G.A. Rozgonyi and C.V. Shank,Mat. Res. Soc. Symp. Proc. 35, 465 (Philadelphia, Pa 1984)
C.S. Wu, D.M. Scott, S.S. Lau, A. Wakita, T.W. Sigmon, J.A. Knapp, S.T. Picraux: InThin Films and Interfaces II, ed. by J.E.E. Baglin, D.R. Cambell and W.K. Chu,Mat. Res. Soc. Symp. Proc. 25, 93 (Elsevier, New York 1984)
B.S. Lim, E. Ma, M-A. Nicolet, M. Natan: J. Appl. Phys. (in press)
K.N. Tu, J.W. Mayer: InThin Films, Interdiffusion and Reactions, ed. by J.M. Poate, K.N. Tu and J.W. Mayer (Wiley, New York 1978) Chap. 10
C.-D. Lien, M-A. Nicolet, S.S. Lau: Thin Solid Films143, 63 (1986)
S.M. Sze:Physics of Semiconductor Devices, 2nd ed. (Wiley, New York 1981) Chap. 1
C.-D. Lien, M-A. Nicolet, C.S. Pai, S.S. Lau: Appl. Phys. A36, 153 (1985)
M. Natan: Appl. Phys. Lett.49, 257 (1986)
A. Katz, Y. Komem, paper presented at MRS Fall Meeting, 1986, Boston, USA (to appear in the proceedings)
For a summary, see, for example [2]