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Determination of the electron temperature of a degenerate semiconductor in quantizing fields under heating by an electric field

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Abstract

Investigations of the Shubnikov-de Haas oscillation of the transverse magnetoresistance due to the magnitude of the electric field in n-type InSb with 5 · 1015, 3 · 1016 cm−3 concentrations at a 4.2 °K temperature are carried out herein. A method is proposed to determine the electron temperature Te; dependences of Te on the electric and magnetic fields in the sample are obtained for a transversely oriented magnetic field. The relaxation time of the electron energy is estimated.

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Authors and Affiliations

  1. Moscow Engineering-Physics Institute, USSR

    Yu. A. Bykovskii, I. A. Garifullin, V. F. Elesin, V. I. Kadushkin, E. A. Protasov & A. G. Rodionov

Authors
  1. Yu. A. Bykovskii
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  2. I. A. Garifullin
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  3. V. F. Elesin
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  4. V. I. Kadushkin
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  5. E. A. Protasov
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  6. A. G. Rodionov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 96–100, February, 1972.

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Bykovskii, Y.A., Garifullin, I.A., Elesin, V.F. et al. Determination of the electron temperature of a degenerate semiconductor in quantizing fields under heating by an electric field. Soviet Physics Journal 15, 230–233 (1972). https://doi.org/10.1007/BF00819439

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  • DOI: https://doi.org/10.1007/BF00819439

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