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Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon

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Abstract

Reflection high energy electron diffraction has been used to investigate the amorphous to polycrystalline structure transition in silicon induced by laser pulse. The power density of the ruby laser pulse, in the free generation mode, has been maintained below the threshold to induce surface damage. Depth analysis has been carried out in 〈100〉 silicon crystal using the channeling effect technique.

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Authors and Affiliations

  1. Istituto di Struttura della Materia dell'Università, Corso Italia, I-95219, Catania, Italy

    G. Foti & E. Rimini

  2. Istituto di Fisica di Ingegneria, Uninersità di Roma, Italy

    G. Vitali & M. Bertolotti

Authors
  1. G. Foti
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  2. E. Rimini
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  3. G. Vitali
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  4. M. Bertolotti
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Foti, G., Rimini, E., Vitali, G. et al. Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon. Appl. Phys. 14, 189–191 (1977). https://doi.org/10.1007/BF00883088

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  • DOI: https://doi.org/10.1007/BF00883088

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