Summary
We report room temperature time-resolved photoluminescence (PL) and temperature dependence of continuous wave (cw) PL studies of high fluence (from 3·1016 to 3·1017 cm−2) Si+-implanted thermal SiO2 layers after annealing at high temperature (T=1000°C). Such measurements were related to TEM analysis of samples. Nancocrystals were observed at TEM only a samples implanted at higher fluence. In these samples a near infrared PL signal peaked at approximately 1.5 eV with decay time of about 100 μs is present. Besides, in all samples a light emission is present in the green region of the spectrum. The intensity of the emission shows large variations with ion fluence, and is characterized by 0.4, 2 and 7 ns decay times.
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Zanghieri, L., Meda, L. Photoluminescence studies of Si nanocrystals. Nuov Cim D 18, 1167–1177 (1996). https://doi.org/10.1007/BF02464694
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DOI: https://doi.org/10.1007/BF02464694