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Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distribution

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Abstract

Unsymmetric trapezoidal power distribution produced by a tungsten halogen lamp and a focusing mirror has been employed in zone-melting recrystallization of polysilicon. Focusing mirror is designed based on the ray-tracing method. Experimental results show that the trapezoidal type power distribution is superior to the Gaussian type which is obtained with a conventional strip heater, in that the controllability and reproducibility are significantly improved while the recrystallized film shows comparable or slightly better crystal quality. It has been found that a lower thermal gradient at the liquid-tosolid interface under a lower scan speed improves the quality of the recrystallized film prepared by the trapezoidal power distribution.

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Authors and Affiliations

  1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, P.O. Box 150, 130-650, Cheongryang, Seoul, Korea

    Jin-Ho Choi, Ho-Jun Song & Choong-Ki Kim

Authors
  1. Jin-Ho Choi
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  2. Ho-Jun Song
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  3. Choong-Ki Kim
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Choi, JH., Song, HJ. & Kim, CK. Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distribution. J. Electron. Mater. 20, 231–235 (1991). https://doi.org/10.1007/BF02651898

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  • DOI: https://doi.org/10.1007/BF02651898

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