Abstract
A robust process has been developed for the reproducible growth of in-situ doped Hg1−xCdxTe:As alloys by molecular beam epitaxy. Net hole concentrations in excess of 5 x 1017 cm−3, with peak mobilities >200 cm2/Vs were measured in Hg0.74Cd0.26Te:As films. The p-type layers were twin-free and consistently exhibit narrow x-ray rocking curves (<40 arc sec). The reproducible growth of small lots of p-on-n LWIR detector structures has been established. For a typical lot consisting of 13 layers, the average x-value of the n-type base layer was 0.226 with a standard deviation of 0.003. The lateral compositional uniformity across a 2.5 cm × 2.5 cm wafer was × = +- 0.0006. High performance p-on-n LWIR diodes were fabricated that exhibited RoAo values (0-fov at 78K) as large as 350 Q cm2 at 10.4 µm.
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O.K. Wu, D.M. Jamba and G.S. Kamath,J. Cryst. Growth, 127, 365 (1993).
O.K. Wu, D.M. Jamba and G.S. Kamath,J. Electron. Mater. 24, 423 (1995).
T.J. de Lyon, R.D. Rajavel, O.K. Wu, S.M. Johnson, C.A. Cockrum and G.M. Venzor,J. Electron. Mater. 25, 1340 (1996).
R.D. Rajavel,D.M.Jamba, O.K.Wu, J.E.Jensen, J.A. Wilson, E.A. Patten, K. Kosai, P. Goetz, B. Baumgratz, G.R. Chapman and W.A. Radford, Abstract submitted to theNinth Intl. Conf. MBE, August 5–9, 1996.
J.S. Blakemore,Semiconductor Statistics, (Dover Publications Inc., 1987), Chap. 3, p. 166.
W. Scott,J. Appl. Phys. 42, 803 (1971).
R.D. Rajavel, D.M. Jamba and O.K. Wu,J. Vac. Sci. Technol. B 14, 2362 (1996).
S.M. Johnson, J.B. Jones, W.L. Ahlgren, W.J. Hamilton, M. Ray and G.S. Tompa, inLong Wavelength Semiconductor Devices, Materials, and Processes, Materials Research Society Symp. Proc., eds. A. Katz, R.M. Biefield, R.L. Gunshor and R.J. Malik, vol. 216 (Pittsburgh, PA: Materials Research Society, 1991), p. 141.
J. Bajaj, J.M. Arias, M. Zandian, J.G. Pasko, L.O. Bubulac, R.B. Bailey and L.J. Kozlowski,J. Electron. Mater. 25, 1393 (1996).
T. Tung, L.V. DeArmond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens and S.J. Tighe,Infrared Detectors: State of the Art, Vol. 1735 (SPIE, 1992), p. 109.
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Rajavel, R.D., Jamba, D., Wu, O.K. et al. Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays. J. Electron. Mater. 25, 1411–1415 (1996). https://doi.org/10.1007/BF02655043
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DOI: https://doi.org/10.1007/BF02655043