Skip to main content
SpringerLink
Log in

Characterization of rhenium-silicon thin films

  • Original paper
  • Published:
Fresenius' Journal of Analytical Chemistry Aims and scope Submit manuscript

Abstract

Rhenium-silicon thin films have been characterized as promising compounds of thermoelectric applications by means of analytical transmission electron microscopy and X-ray diffraction referring to composition, morphology, short-range order and phase formation. Beyond the discussion of the results some methodical aspects and problems are presented.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Institut für Festkörper- und Werkstofforschung Dresden, Postfach 270016, D-01171 Dresden, Germany, , , , , , DE

    J. Thomas, Joachim Schumann & Wolfram Pitschke

Authors
  1. J. Thomas
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Joachim Schumann
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Wolfram Pitschke
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Received: 24 June 1996 / Revised: 16 December 1996 / Accepted: 3 January 1997

Rights and permissions

Reprints and permissions

About this article

Cite this article

Thomas, J., Schumann, J. & Pitschke, W. Characterization of rhenium-silicon thin films. Fresenius J Anal Chem 358, 325–328 (1997). https://doi.org/10.1007/s002160050419

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s002160050419

Keywords

Search

Navigation