Abstract
We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO x on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.
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Acknowledgements
This work was supported by the JSPS through its FIRST Program and MEXT kakenhi “Quantum Cybernetics”. K.H. gratefully acknowledges the support of the King Fahd University of Petroleum and Minerals, Saudi Arabia, under the FT100009 DSR project.
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Y.A. Pashkin is on leave from Lebedev Physical Institute, Moscow 119991, Russia.
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Harrabi, K., Pashkin, Y.A., Astafiev, O.V. et al. Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices. Appl. Phys. A 108, 7–11 (2012). https://doi.org/10.1007/s00339-012-6981-8
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DOI: https://doi.org/10.1007/s00339-012-6981-8