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Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si

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Abstract

In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from ∼0 cm−2 to −2×1012 cm−2 by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO x layer.

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Acknowledgements

This work is supported by the Foundation for Innovative Research Groups of China (No. 60821092), Innovation Project of Shanghai Institute of Technical Physics (No. QZY51), and Shanghai Rising-Star Program (No. 11QB1406800).

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Authors and Affiliations

  1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China

    Y. N. Dou, C. Y. Huang & J. H. Chu

  2. Suntech Power Co., Ltd., 201114, Shanghai, China

    Y. He, X. G. Ma & R. Chen

  3. Institute of Electrical Engineering, Chinese Academy of Sciences, 100190, Beijing, China

    C. L. Zhou

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  1. Y. N. Dou
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Correspondence to Y. N. Dou.

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Dou, Y.N., He, Y., Huang, C.Y. et al. Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si. Appl. Phys. A 109, 673–677 (2012). https://doi.org/10.1007/s00339-012-7097-x

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