Abstract
The resolution enhancement of laser-induced forward transfer (LIFT) is investigated through the pre-patterning of Cr on the donor substrate. 85 nm dots are first patterned on a microscope slide, and an 800 nm wavelength and 130 fs pulse laser with a beam waist of ∼9 μm is used to transfer the Cr dots to an acceptor substrate. The threshold fluence is found to be ∼0.15 the threshold fluence of a similar continuous film, which is thought to be due to the fact that no force is needed to tear away Cr from the film itself, unlike in a continuous film experiment. Since the volume of the material limits the transfer feature sizes instead of the laser parameters, as in a continuous film system, minimum transferable feature diameters are significantly lower compared to the continuous film case. Also, the transferred feature diameters are not dependent on the laser parameters, so the diameters are consistent across a wide range of fluences. The force per unit area generated by the laser at threshold fluence is estimated to be ∼3 GPa, which is consistent with previous results in the literature. The simplified model that our pre-patterned Cr LIFT experiment represents would make it an ideal case for benchmarking molecular dynamics simulations of femtosecond laser ablation.
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J. Bohandy, B.F. Kim, F.J. Adrian, J. Appl. Phys. 60, 1538 (1986)
D.P. Banks, C. Grivas, I. Zergiotti, R.W. Eason, Opt. Express 16, 3249 (2008)
C.L. Jones, K.S. Kaur, P. Ganguly, D.P. Banks, Y.J. Ying et al., Appl. Phys. A 101, 333 (2010)
I. Zergiotti, S. Mailis, N.A. Vainos, P. Papakonstantinou, C. Kaqlpouzos, C.P. Grigoropoulos, C. Fotakis, Appl. Phys. A 66, 579 (1998)
C. Germain, L. Charron, L. Lilge, Y.Y. Tsui, Appl. Surf. Sci. 253, 8328 (2007)
L. Rapp, A.K. Diallo, A.P. Alloncle, C. Videlot-Ackermann, F. Fages, P. Delaportel, Appl. Phys. Lett. 95, 171109 (2009)
V.P. Veiko, Proc. SPIE 4157, 93 (2000)
D.P. Banks, C. Grivas, J.D. Mills, R.W. Eason, I. Zergiotti, Appl. Phys. Lett. 89, 192107 (2006)
D.P. Banks, Ph.D. Dissertation, University of Southampton (2008)
V. Sametoglu, V. Sauer, Y.Y. Tsui (in preparation)
Y.Y. Tsui, J. Santiago, Y.M. Li, R. Fedosejevs, Opt. Commun. 111, 360 (1994)
S.D. Brorson, A. Kazeroonian, S. Moodera, D.W. Face, T.K. Cheng et al., Phys. Rev. Lett. 64, 2172 (1990)
N.A. Dubrovinskaia, L.S. Dubrovinsky, S.K. Saxena, Calphad 21, 497 (1997)
S.K. Lee, K.K. Yoon, K.H. Whang, S.J. Na, Surf. Coat. Technol. 113, 63 (1999)
P. Benjamin, C. Weaver, Proc. R. Soc. A, Math. Phys. Eng. Sci. 254, 163 (1960)
P. Benjamin, C. Weaver, Proc. R. Soc. A, Math. Phys. Eng. Sci. 254, 177 (1960)
P. Benjamin, C. Weaver, Proc. R. Soc. A, Math. Phys. Eng. Sci. 261, 516 (1961)
K.L. Mittal, Electrocomp. Sci. Technol. 3, 21 (1976)
J.W. Beams, Tech. Proc. Am. Electroplaters Soc. 43, 211–214 (1956)
J.W. Beams, Science 120, 619–625 (1954)
D.G. Papazoglou, A. Karaiskou, I. Zergioti, C. Fotakis, Appl. Phys. Lett. 81, 1594 (2002)
O. Samek, V. Hommes, R. Hergenroder, S.V. Kukhlevsky, Rev. Sci. Instrum. 76, 086104 (2005)
M. Stafe, C. Negutu, N.N. Puscas, I.M. Popescu, Rom. Rep. Phys. 64, 758–770 (2010)
B. Bhushan, Springer Handbook of Nanotechnology, Vol. 2, Chap. 7: International Technology Roadmap for Semiconductors, Lithography, 2nd edn. (Springer, Berlin, 2009)
G. Kreindl, T. Glinsner, R. Miller, Nat. Photonics 4, 27–28 (2010)
D.S. Ivanov, L.V. Zhigilei, Phys. Rev. Lett. 98, 195701 (2007)
Acknowledgements
This research work was supported by the Natural Sciences and Engineering Research Council (NSERC) of Canada, the Canadian Institute for Photonic Innovation (CIPI), and Alberta Innovates: Technology Futures. Facilities used in the creation and characterization of the samples include the NanoFab (with Scott Munro) and ACSES (with Shihong Xu) at the University of Alberta and the NINT Cleanroom.
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Sametoglu, V., Sauer, V. & Tsui, Y.Y. Nanoscale laser-induced forward transfer through patterned Cr films. Appl. Phys. A 110, 823–827 (2013). https://doi.org/10.1007/s00339-012-7159-0
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DOI: https://doi.org/10.1007/s00339-012-7159-0