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Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

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54

, 2512 (1996)]. The trapping coefficient of single-negative silicon vacancies was also derived.

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Authors and Affiliations

  1. Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370–12, Japan, , , , , , JP

    A. Kawasuso, H. Itoh, N. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama & S. Okada

  2. Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan (Fax: +81-273/46-9690, E-mail: ak@taka.jaeri.go.jp), , , , , , JP

    H. Okumura & S. Yoshida

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  1. A. Kawasuso
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  2. H. Itoh
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  3. N. Morishita
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  4. M. Yoshikawa
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  5. T. Ohshima
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  6. I. Nashiyama
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  7. S. Okada
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  8. H. Okumura
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  9. S. Yoshida
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Received: 25 August 1997/Accepted: 27 March 1998

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Kawasuso, A., Itoh, H., Morishita, N. et al. Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance . Appl Phys A 67, 209–212 (1998). https://doi.org/10.1007/s003390050759

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