Abstract
Enhanced photoluminescence (PL) in a tellurite glass (TeO2–ZnO) doped with erbium ions (Er3+) and containing silicon nanocrystals (Si-NCs) is reported. The PL increase is mainly attributed to energy transfer from excited Si-NCs to the Er3+ located in the vicinity of the nanocrystals although the contribution of active defects in the glass cannot be completely excluded. Enhancement of ≈300 % was observed in the visible and in the near-infrared regions. In particular, the fourfold enhancement observed for the broad emission centered at ≈1530 nm, corresponding to the Er3+ transition 4I3/2 → 4I15/2, indicates large potential of the composite material for interface with existing telecommunication devices.
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Acknowledgments
We acknowledge financial support from the Brazilian Conselho Nacional de Desenvolvimento Cientifico e Tecnológico (CNPq) and the Fundação de Amparo à Ciência e Tecnologia do Estado de Pernambuco (FACEPE). This work was performed with financial support of the National Institute of Photonics (INCT de Fotônica) project and PRONEX program, a joint initiative of FACEPE and CNPq.
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da Silva, D.S., de Assumpção, T.A.A., de Simone, G.B.C. et al. Enhanced Er3+ photoluminescence in TeO2–ZnO glass containing silicon nanocrystals. Appl. Phys. B 121, 117–121 (2015). https://doi.org/10.1007/s00340-015-6207-9
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DOI: https://doi.org/10.1007/s00340-015-6207-9