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Enriched residual free bubbles for semiconductor device simulation

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Abstract

This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.

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Authors and Affiliations

  1. School of Engineering, Institute of Mechanics and Advanced Materials, Cardiff University, Queen’s Buildings, The Parade, Cardiff, CF24 3AA, Wales, UK

    R. N. Simpson, S. P. A. Bordas & A. R. Brown

  2. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, Scotland, UK

    A. Asenov

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  1. R. N. Simpson
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  2. S. P. A. Bordas
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  3. A. Asenov
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  4. A. R. Brown
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Correspondence to S. P. A. Bordas.

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Simpson, R.N., Bordas, S.P.A., Asenov, A. et al. Enriched residual free bubbles for semiconductor device simulation. Comput Mech 50, 119–133 (2012). https://doi.org/10.1007/s00466-011-0658-6

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  • DOI: https://doi.org/10.1007/s00466-011-0658-6

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