Abstract
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
Similar content being viewed by others
References
M. I. Dyakonov and M. S. Shur, Phys. Rev. Lett. 71, 2465 (1993).
M. I. Dyakonov and M. S. Shur, IEEE Trans. Electron Devices 43, 380 (1996).
W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Capy, and M. S. Shur, Appl. Phys. Lett. 84, 2331 (2004).
N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, J. Appl. Phys. 97, 114313 (2005).
W. Knap, F. Teppe, N. Dyakonova, D. Coquillat, and J. Lusakowski, Journal-of-Physics: Condensed-Matter. 20 (38), 384205 (2008).
J.-Q. Lu, M. S. Shur, J. L. Hesler, L. Sun, and R. Weikle, IEEE Electron Device Lett. 19, 373 (1998).
J.-Q. Lu and M. S. Shur, Appl. Phys. Lett. 78, 2587 (2001).
W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, Appl. Phys. Lett. 81, 4637 (2002).
W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, J. Appl. Phys. 91, 9346 (2002).
W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lu, M. S. Shur, C. A. Saylor, and L. C. Brunel, Appl. Phys. Lett. 80, 3434 (2002).
A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, Appl. Phys. Lett. 89, 131926 (2006).
A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. B. Veksler, S. Rumyantsev, M. S. Shur, D. Seliuta, G. Valusis, S. Bollaert, A. Shchepetov, Y. Roelens, C. Gaquiere, D. Theron, and A. Cappy, Electron. Lett. 42, 1342 (2006).
W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Łusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, Appl. Phys. Lett. 85, 675 (2004).
R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, Appl. Phys. Lett. 89, 253511 (2006).
A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolìvar, D. Glaab, and H. G. Roskos, J. Appl. Phys. 105, 114511 (2009).
E. Öjefors, U. R. Pfeiffer, A. Lisauskas, and H. G. Roskos, “A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology” to appear in IEEE J. Solid-State Circuits 44 (7), (2009).
M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, J. Appl. Phys. 104, 024519 (2008).
M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, W. Gwarek, and S. Boubanga, Act. Phys. Pol. A 114, 1337 (2008).
D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X. -C. Zhang, and M. S. Shur, Solid-State Electron. 53 (6), 571 (2009).
S. A. Maas, A GaAs MESFET Mixer with Very Low Intermodulation, IEEE Transactions on Microwave Theory and Techniques 35, No. 4 (1987).
H. Zirath, N. Rorsman, A Resisitive HEMT-Mixer with Very Low LO-Power Requirements and Low Intermodulation, 21st European Microwave Conference Proceedings, pp. 1469–1474, EuMC (1991).
H.-G. Krekels, B. Schiek, and E. Menzel, Proc. European Microwave Conf., 174 (1992).
S. Boubanga-Tombet, M. Sakowicz, D. Coquillat, F. Teppe, W. Knap, M. I. Dyakonov, K. Karpierz, J. Łusakowski, and M. Grynberg, Appl. Phys. Lett. (2009), accepted for publication, (http://arxiv.org/abs/0904.2081).
Within the hydrodynamic approach [1], the lhs of Eq. (4) contains an additional “convective” nonlinear term v(∂v/∂x). The hydrodynamic approach is valid when the collisions between electrons are more frequent than collisions with impurities and phonons.
M. I. Dyakonov and A. S. Furman, Sov. Phys. JETP G 65, 574 (1987).
T. Tanigawa, T. Onishi, O. Imafuji, S. Takigawa, and T. Otsuji, “AlGaN/GaN Plasmon-Resonant Terahertz Detectors with On-Chip Patch Antennas”, proceedings of The Conference on Lasers and Electro-Optics (CLEO) 2009.
W. Stillman, M. S. Shur, D. Veksler, S. Rumyantsev, and F. Guarin, Electron. Lett. 43, 422 (2007).
M. Dyakonov, Semiconductors 42, 984 (2008).
V. V. Popov, O. V. Polischuk, W. Knap, and A. El Fatimy, Appl. Phys. Lett. 93, 263503 (2008).
V. Ryzhii, A. Satou, W. Knap, and M. S. Shur, J. Appl. Phys. 99, 084507 (2006).
I. Khmyrova and Yu Seijyou, Appl. Phys. Lett. 91, 143515 (2007).
A. Shchepetov, C. Gardès, Y. Roelens, A. Cappy, S. Bollaert, S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, D. Seliuta, R. Vadoklis, and G. Valušis, Appl. Phys. Lett. 92, 242105 (2008).
S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, A. Shchepetov, C. Gardès, Y. Roelens, S. Bollaert, D. Seliuta, R. Vadoklis, and G. Valušis, Appl. Phys. Lett. 92, 212101 (2008).
D. Veksler, F. Teppe, A. P. Dmitriev, V. Yu, W. K. Kachorovskii, and M. S. Shur, Phys. Rev. B 73, 125328 (2006).
F. Teppe, D. Veksler, V. Yu, A. P. Kachorovski, S. R. Dmitriev, W. Knap, and M. S. Shur, Appl. Phys. Lett. 87, 052107 (2005).
F. Teppe, D. Veksler, V. Yu, A. P. Kachorovski, A. P. Dmitriev, X.-C. Zhang, S. Rumyantsev, W. Knap, and M. S. Shur, Appl. Phys. Lett. 87, 022102 (2005).
F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, Appl. Phys. Lett. 89, 222109 (2006).
G. R. Aizin, V. V. Popov, and O. V. Polischuk, Appl. Phys. Lett. 89, 143512 (2006).
V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, and N. J. M. Horing, J. Appl. Phys. 94, 3556 (2003).
X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, Appl. Phys. Lett. 81, 1627 (2002).
E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, Appl. Phys. Lett. 90, 181127 (2007).
T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, Opt. Express 14, 4815 (2006).
T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, Appl. Phys. Lett. 89, 263502 (2006).
Y. M. Meziani, T. Otsuji, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, Appl. Phys. Lett. 90, 061105 (2007).
D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, W. Knap, Y. M. Meziani, T. Nishimura, and T. Otsuji, to be submitted to J. Appl. Phys. (2009).
A. Lisauskas, W. von Spiegel, S. Boubanga, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, Electr. Lett. 44, 408 (2008).
S. Nadar, H. Videlier, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, G. Valusis, D. Seliuta, and I. Kasalynas, to be submitted to J. Appl. Phys. (2009).
A. El Fatimy, J.C. Delagnes, E. Abraham, E. Nguema, P. Mounaix, F. Teppe, and W. Knap, ICIMW, p1-2 10.1109 4665764 (2008)
U.R. Pfeiffer, E. Öjefors, A. Lisauskas, D. Glaab, and H.G. Roskos "A CMOS Focal-Plane Array for Heterodyne Terahertz Imaging" to appear in the Digest of IEEE Radio Frequency Integrated Circuits Symposium 2009.
A. W. Min Lee and Q. Hu, Optics Letters 30, 2563 (2005).
A. W. M. Lee, B. S. Williams, S. Kumar, Q. Hu, and J. L. Reno, IEEE Photonics Technol. Lett. 18, 1415 (2006).
B. N. Behnken, G. Karunasiri, D. R. Chamberlin, P. R. Robrish, and J. Faist, Opt. Lett. 33, 440 (2008).
I. Kasalynas, A. J. L. Adam, T. O. Klaassen, J. N. Hovenier, G. Pandraud, V. P. Iordanov, and P. M. Sarro, IEEE J. Sel. Top. Quantum Electron. 14, 363 (2008).
I. Kašalynas, D. Seliuta, R. Simniškis, V. Tamošiūnas, K. Köhler, and G. Valušis, Electron. Lett. 45, 833 (2009).
D. Seliuta, I. Kašalynas, V. Tamošiūnas, S. Balakauskas, Z. Martūnas, S. Ašmontas, G. Valušis, A. Lisauskas, H. G. Roskos, and K. Köhler, Electron. Lett. 42, 825 (2006).
Acknowledgements
We thank prof. T. Skotnicki (ST Microelectronics) for providing the Silicon FETs, prof. A. Cappy and prof. S. Bollaert (IEMN, Lille) for providing InGaAs HEMTs. We thank also dr. P. Mounaix and dr. E. Abraham (LPMOH CNRS and Bordeaux I University) for their experimental support in the time domain spectroscopy. This work was financially supported in part by JSPS International Fellowship Program for Research in Japan, by the joint French-Lithuanian research program “Gilibert/EGIDE.”, and by the joint French-Japanese research program “Sakura/EGIDE.”. JŁ, WK and KK acknowledge the support of 162/THz/2006/02 and MTKD-CT-2005-029671 grants. The authors from the Montpellier University acknowledge the CNRS guiding GDR and GDR-E projects “Semiconductor sources and detectors of THz frequencies” and the Region of Languedoc-Roussillon through the “Terahertz Platform” project, as well as ANR TeraGaN project. Experiments at Vilnius were conducted under the project “Terahertz optoelectronics: devices and applications” (No. 179 J).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Knap, W., Dyakonov, M., Coquillat, D. et al. Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications. J Infrared Milli Terahz Waves 30, 1319–1337 (2009). https://doi.org/10.1007/s10762-009-9564-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10762-009-9564-9