Transmission, photoluminescence, and reflectance spectra of TlInS2 single crystals grown by the Bridgman–Stockbarger method were measured at 4.2 K near the fundamental absorption edge. Narrow lines at ~2.5535 and ~2.5694 eV were observed in the transmission spectrum and assigned to ground and excited free-exciton states, respectively. The free-exciton binding energy and band-gap energy Eg were found to be ~21.2 meV and ~2.5747 eV, respectively. A recombination mechanism was proposed for the TlInS2 near-band-edge and deep luminescence.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 79, No. 3, pp. 418–423, May–June, 2012.
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Karotki, A.V., Sheleg, A.U., Shevtsova, V.V. et al. Optical properties of thallium indium disulfide (TlInS2) single crystals. J Appl Spectrosc 79, 398–403 (2012). https://doi.org/10.1007/s10812-012-9614-2
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DOI: https://doi.org/10.1007/s10812-012-9614-2