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Effect of W content in Co-W-P metallization on both oxidation resistance and resin adhesion

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Abstract

The application of Co-W-P plating technology in high-temperature package structure is advantageous from a point of structural reliability because Co-W-P metallization is known to deliver strong bonding to both high-temperature-compatible Ag-sintered joining and high-temperature-compatible encapsulation resins. However, Co-W-P, unlike a noble metal, has a potential risk of surface oxidation in the module fabrication process. This surface oxidation can result in a decrease in resin adhesion. In this paper, the effects of W content (7 wt%, 11 wt%, 21 wt%) in Co-W-P metallization on both the oxidation resistance and the resin adhesion were studied. The resin adhesion on the annealed Co-W-P metallization with a high W content (21 wt%) was found to be sufficiently strong even after 250 °C anneal for 1 h. This resin adhesion strength was not present in other Co-W-P metallization tests. SEM–EDS analysis revealed that the oxidization of the Co-W-P-metallized surface during the anneal process proceeded more slowly in the case of the Co-W-P metallization with a doping 21 wt% W. XPS analysis revealed that Co(OH)2, necessary for a chemical reaction with the resin, exists mainly on the Co-W-P-metallized surface in the case of doping 21 wt% W, even after 250 °C anneal. XRD analysis revealed its structure to be a characteristic Co-W solid solution, unlike the structures found in other Co-W-P metallization. The findings in this study are significant for the promotion of Co-W-P metallization in the module fabrication process, as well as to the fundamental understanding of oxidation resistance and adhesion behavior on Co-W-P metallization.

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References

  1. Casady JB, Johnson RW (1996) Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid State Electron 39:1409–1422

    Article  Google Scholar 

  2. Buttay C, Planson D, Allard B, Bergogne D, Bevilacqua P, Joubert C, Lazar M, Martin C, Morel H, Tournier D, Raynaud C (2011) State of the art of high temperature power electronics. Mater Sci Eng 176:283–288

    Article  CAS  Google Scholar 

  3. Hamada K, Nagao M, Ajioka M, Kawai F (2015) SiC-emerging power device technology for next-generation electrically powered environmentally friendly vehicles. IEEE Trans Electron Devices 62:278–285

    Article  CAS  Google Scholar 

  4. Wen X, Fan T, Ning P, Guo Q (2017) Technical approaches towards ultra-high power density SiC inverter in electric vehicle applications. CES Trans Electr Mach Syst 1:231–237

    Google Scholar 

  5. Zhu J, Kim H, Chen H, Erickson R, Maksimovic D (2018) High efficiency SiC traction inverter for electric vehicle applications. In: 33nd Annual IEEE applied power electronics conference and exposition (APEC), pp. 1428–1433

  6. Tanimoto S, Hara A, Yamashita M, Suzuki T, Araki S, Sato S, Akatsu K (2018) Extremely compact half-bridge SiC power modules built into EV in-wheel motor. Mater Sci Forum 924:849–853

    Article  Google Scholar 

  7. Zhang H, Li W, Gao Y, Zhang H, Jiu J, Suganuma K (2017) Enhancing low-temperature and pressureless sintering of micron silver paste based on an ether-type solvent. J Electron Mater 46:5201–5208

    Article  CAS  Google Scholar 

  8. Gao Y, Zhang H, Li W, Jiu J, Nagao S, Sugahara T, Suganuma K (2017) Die bonding performance using bimodal Cu particle paste under different sintering atmospheres. J Electron Mater 46:4575–4581

    Article  CAS  Google Scholar 

  9. Yao Y, Lu GQ, Boroyevich D, Ngo KDT (2015) Survey of high-temperature polymeric encapsulants for power electronics packaging. IEEE Trans Compon Packag Manuf Technol 5:168–181

    Article  CAS  Google Scholar 

  10. Yan Y, Shi X, Liu J, Zhao T, Yu Y (2002) Thermosetting resin system based on novolakand bismaleimide for resin-transfer molding. J Appl Polym Sci 83:1651–1657

    Article  CAS  Google Scholar 

  11. Iwashige T, Endo T, Sugiura K, Tsuruta K, Sakuma Y, Kurosaka S, Oda Y, Chen C, Nagao S, Suganuma K (2019) CoW metallization for high strength bonding to both sintered Ag joints and encapsulation resins. J Mater Sci Mater Electron 30:11151–11163

    Article  CAS  Google Scholar 

  12. Sugiura K, Iwashige T, Tsuruta K, Chen C, Nagao S, Funaki T, Suganuma K (2019) Reliability evaluation of SiC power module with sintered Ag die attach and stress-relaxation structure. IEEE Trans Compon Packag Manuf Technol 9:609–615

    Article  CAS  Google Scholar 

  13. Siow KS (2014) Are sintered silver joints ready for use as interconnect material in microelectronic packaging? J Electron Mater 43:947–961

    Article  CAS  Google Scholar 

  14. Siow KS, Lin YT (2016) Identifying the development state of sintered silver (Ag) as a bonding material in the microelectronic packaging via a patent landscape study. J Electron Packag 138:020804-1–020804-13

    Google Scholar 

  15. Chen C, Suganuma K, Iwashige T, Sugiura K, Tsuruta K (2018) High-temperature reliability of sintered microporous Ag on electroplated Ag, Au, and sputtered Ag metallization substrates. J Mater Sci Mater Electron 29:1785–1797

    Article  CAS  Google Scholar 

  16. Fan T, Zhang H, Shang P, Li C, Chen C, Wang J, Liu Z, Zhang H, Suganuma K (2018) Effect of electroplated Au layer on bonding performance of Ag pastes. J Alloy Compd 731:1280–1287

    Article  CAS  Google Scholar 

  17. Iwashige T, Endo T, Sugiura K, Tsuruta K, Sakuma Y, Kurosaka S, Oda Y, Chen C, Nagao S, Suganuma K (2019) Effect of annealing Co-W-P metallization substrate onto its resin adhesion. J Mater Sci Mater Electron 30:13247–13257

    Article  CAS  Google Scholar 

  18. El-Dahshan ME, Whittle DP, Stringer J (1976) The oxidation of cobalt–tungsten alloys. Corros Sci 16:77–82

    Article  CAS  Google Scholar 

  19. Aliprando JJ, Shatynski SR (1981) The oxidation of a directionally solidified cobalt-tungsten eutectic alloy. Oxid Met 15:455–469

    Article  CAS  Google Scholar 

  20. Kanzaki S, Shibata T, Kurosaka S, Oda Y, Hashimoto S (2019) Barrier properties of electroless deposit of Co-W-P alloy. In: ICEP 2019 proceedings

  21. Herrera-Gomez A, Bravo-Sanchez M, Ceballos-Sanchez O, Vazquez-Lepe MO (2014) Practical methods for background subtraction in photoemission spectra. Surf Interface Anal 46:897–905

    Article  CAS  Google Scholar 

  22. Koenig MF, Grant JT (1986) Comparison of factor analysis and curve-fitting for data analysis in XPS. J Electron Spectrosc Relat Phenom 41:145–156

    Article  CAS  Google Scholar 

  23. Kosta I, Cinca N, Guilemany JM, Vicenzo A, Sarret M, Müller C (2010) Mechanical properties of nanocrystalline CoP alloy deposits by pulse plating technique. Mater Sci Eng A 735:120–125

    Google Scholar 

  24. Sheikholeslam MA, Enayati MH, Raeissi K (2008) Characterization of nanocrystalline and amorphous cobalt–phosphorous electrodeposits. Mater Lett 62:3629–3631

    Article  CAS  Google Scholar 

  25. Massalski TB (1990) Binary alloy phase diagrams, vol 2, 2nd edn. ASM International, Materials Park, pp 1257–1259

    Google Scholar 

  26. Itoh K, Wang F, Watanabe T (2003) Microstructure of electrodeposited Co-W alloy films. J Jpn Inst Met Mater 67:499–505

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO) Project “Establishment of a high-density and miniaturization foundation technology for the application of SiC power module in high temperature” (Grant No. P10022).

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Authors and Affiliations

  1. Electronics Research and Innovation Division, Denso Corporation, Komenoki-cho, Minamiyama 500-1, Nissin, Aichi, 470-0111, Japan

    Tomohito Iwashige, Takeshi Endo, Kazuhiko Sugiura & Kazuhiro Tsuruta

  2. Technical Support Group, C. Uyemura & Co., Ltd, Kikui 1-20-11, Nagoya, Aichi, 451-0044, Japan

    Yuichi Sakuma

  3. Central Research Laboratory, C. Uyemura & Co., Ltd, Deguchi 1-5-1, Hirakata, Osaka, 573-0065, Japan

    Yukinori Oda

  4. Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan

    Tomohito Iwashige, Chuantong Chen, Shijo Nagao, Tohru Sugahara & Katsuaki Suganuma

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  1. Tomohito Iwashige
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  2. Takeshi Endo
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  3. Kazuhiko Sugiura
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  4. Kazuhiro Tsuruta
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  6. Yukinori Oda
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  7. Chuantong Chen
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  10. Katsuaki Suganuma
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Correspondence to Tomohito Iwashige.

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Iwashige, T., Endo, T., Sugiura, K. et al. Effect of W content in Co-W-P metallization on both oxidation resistance and resin adhesion. J Mater Sci 55, 644–659 (2020). https://doi.org/10.1007/s10853-019-04028-z

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  • DOI: https://doi.org/10.1007/s10853-019-04028-z

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