Abstract
The study of the ferromagnetic transition of Ga1−xMnxAs dilute magnetic semiconductor (DMS) is of much interest, mainly due to its potential application in spintronic devices. Based on the mean field approach, we present the average contribution of the hole spins by considering the holes in an impurity band (IB). In order to calculate the mean configuration of spins of impurities Mn +2, we use a formalism proposed for a spatial disordered system. The results for the spontaneous magnetization and the critical temperature are compared to experimental results and other theoretical findings.
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This work was partially supported by the Brazilian agencies FAPESB/PRONEX and CNPQ.
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da Silva Neves, R., Ferreira da Silva, A. & Kishore, R. Ferromagnetism in Disordered Magnetic Semiconductors. J Supercond Nov Magn 28, 751–756 (2015). https://doi.org/10.1007/s10948-014-2789-4
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DOI: https://doi.org/10.1007/s10948-014-2789-4