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Effect of doping concentration and annealing temperature on threshold voltages of bipolar resistive switching in Mn-doped BiFeO3 films

  • Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric applications
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Abstract

Nonvolatile bipolar resistive switching has been investigated in Mn-doped BiFeO3 thin films fabricated by sol–gel method. Based on the analyses of X-ray diffractometer and X-ray photoelectron spectroscopy, the threshold voltages for forming and set operations in bipolar resistive switching, which are found to depend on Mn doping concentration and annealing temperature, can be ascribed to the variation of oxygen vacancy concentration and grain size. Therefore, the modulated ionic oxygen vacancy conductivity has been suggested to play a pivotal role in the resistive switching of Mn-doped BiFeO3 thin films.

Graphical Abstract

The forming and set voltages of resistive switching depend on doping concentration and annealing temperature.

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Acknowledgments

This work was supported by the Natural Science Foundation of Guangdong Province (No. 2014A030310410) and the Research Foundation from Department of Education of Guangdong Province (No. 314B0109). The author greatly acknowledges Prof. B. Wang and Prof. Y. Zheng (Sun Yat-Sen University) for valuable suggestions and discussions.

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Authors and Affiliations

  1. School of Physics and Optical Information Sciences, Jiaying University, Meizhou, 514015, Guangdong, People’s Republic of China

    Jinming Luo, Haining Zhang, Jianping Wen & Xiaodong Yang

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  1. Jinming Luo
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  2. Haining Zhang
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  3. Jianping Wen
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Correspondence to Jinming Luo.

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Luo, J., Zhang, H., Wen, J. et al. Effect of doping concentration and annealing temperature on threshold voltages of bipolar resistive switching in Mn-doped BiFeO3 films. J Sol-Gel Sci Technol 78, 166–170 (2016). https://doi.org/10.1007/s10971-015-3916-9

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  • DOI: https://doi.org/10.1007/s10971-015-3916-9

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