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Optical property of amorphous semiconductor mercury cadmium telluride from first-principles study

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Abstract

The structural and optical properties of amorphous semiconductor mercury cadmium telluride (a-MCT) are obtained by the first principles calculations. The total pair distribution functions and the density of states show that the a-MCT has the semiconductor characteristic. The calculated results of dielectric function show that E 2 peak of the imaginary of dielectric function for the crystal mercury cadmium telluride abruptly disappears in the amorphous case due to the long-range disorders. And the imaginary of dielectric function of a-MCT shows a large broad peak, which is in agreement with the available results of other amorphous semiconductors. From the linear extrapolation of the curve ħωɛ 2(ω)1/2 versus ħω, it can be obtained that the optical energy gap of amorphous semiconductor Hg0.5Cd0.5Te is 0.51±0.05 eV.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Liang Wang, XiaoShuang Chen, Wei Lu, Yan Huang & XiaoFang Wang

  2. State Key Laboratory of Materials Modification by Laser, Electron, and Ion Beams, School of Physics and Optoelectronic Technology and College of Advanced Science and Technology, Dalian University of Technology, Dalian, 116024, China

    JiJun Zhao

Authors
  1. Liang Wang
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  2. XiaoShuang Chen
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  3. Wei Lu
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  4. Yan Huang
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  5. XiaoFang Wang
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Correspondence to XiaoShuang Chen or Wei Lu.

Additional information

Supported by the National Basic Research Program of China (“973” Project) (Grant No. 2007CB613205), the National Natural Science Foundation of China (Grant Nos.10725418, 10734090, 60576068), the Key Fund of Shanghai Science and Technology Foundation (Grant No. 08JC1421100) and the Knowledge Innovation Program of the Chinese Academy of Sciences

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Wang, L., Chen, X., Lu, W. et al. Optical property of amorphous semiconductor mercury cadmium telluride from first-principles study. Sci. China Ser. E-Technol. Sci. 52, 1928–1932 (2009). https://doi.org/10.1007/s11431-009-0119-z

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  • DOI: https://doi.org/10.1007/s11431-009-0119-z

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