Abstract
We describe a modified commercial OMVPE reactor that incorporates quadrupole mass spectrometry (QMS) with a broadband parallel-processing optical spectrometer that simultaneously performs spectroscopic ellipsometry (SE) and reflectance-difference spectroscopy (RDS) measurements. We demonstrate its use by determining the surface temperature of Si to a precision of ±1°C and investigating the initial stages of GaP heteroepitaxy on Si(100). Analysis of the real-time SE data indicates that under our conditions GaP and Si interpenetrate as optically identifiable materials on a thickness scale of 100Å.
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Bell, K.A., Ebert, M., Yoo, S.D. et al. Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor. J. Electron. Mater. 29, 106–111 (2000). https://doi.org/10.1007/s11664-000-0104-6
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DOI: https://doi.org/10.1007/s11664-000-0104-6