Abstract
Sol-Gel method has been used to deposit pure zinc oxide on glass substrates in two different conditions. The molarity was selected 0.2, 0.3 and 0.4 molar, and the annealing temperature was chosen 450 °C, 500 °C and 550 °C. The structural and morphological properties of the thin films have been investigated using X-ray diffraction and field emission scanning electron microscopy, and some important structural parameters of the optimized sample were determined. By using an electric circuit, their ethanol sensing features have been studied. Several related sensing parameters such as activation energy, optimal operating temperature, dynamic response, sensitivity and response/recovery times of the samples were determined and compared. An uncommon p-type sensing behavior is observed in all samples during the increase in operating temperature (at a temperature of about 370 °C). Considering all the sensing parameters, it seems that the sample Zn4 (0.4 molar zinc oxide with 450 °C annealing temperature) is optimized as a sensor.
Similar content being viewed by others
References
F Cui, W Chen, L Jin, H Zhang, Z Jiang and Z Song J. Mater. Sci. Mater. Electron. 29 19697 (2018)
V L Patil, S S Kumbhar, S A Vanalakar, N L Tarwal, S S Mali, J H Kim and et al. New J. Chem. 42 13573 (2018)
D C Pugh, E J Newton, A J T Naik, S M V Hailes and I P Parkin J. Mater. Chem. A 2 4758 (2014)
S A Vanalakar, V L Patil, N S Harale, S A Vhanalakar, M G Gang, J Y Kim and et al. Sens. Actuators B: Chem. 221 1195 (2015)
F Özütok, Irmak Karaduman Er, S Acar and S Demiri J. Mater. Sci.: Mater Electron. 30 259 (2019)
P Vishnukumar, S Vivekanandhan, M Misra and A K Mohanty Mater. Sci. Semicond. Process. 80 143 (2018)
S Kumar, N L Reddy, H S Kushwaha, A Kumar, M V Shankar, K Bhattacharyya and et al. ChemSusChem. 10 3588 (2017)
Q An, P Fassl, Y J Hofstetter, D Becker-Koch, A Bausch, P E Hopkinson and et al. Nano Energy 39 400 (2017)
X Wang, C Zhou, W Wang, B Du, J Cai, G Feng and et al. J. Alloys Compd. 747 826 (2018)
V L Patil, S A Vanalakar, P S Patil and J H. Kim Sens. Actuators B: Chem. 239 1185 (2017)
K Kaviyarasu, G T Mola, S O Oseni, K Kanimozhi, C Ma Magdalane, J. Kennedy and et al. J. Mater. Sci.: Mater. Electron. 30 147 (2019)
D Sett and D Basak Sens. Actuators B: Chem. 243 475 (2017)
A K Ruchika Int. J. Appl. Sci. Eng. Res. 4 427 (2015)
M Deshwal and A Arora J. Mater. Sci.: Mater. Electron. 29 15315 (2018)
W Guo, T Liu, H Zhang, R Sun, Y Chen, W Zeng and et al., Sens. Actuators B: Chem. 49 166 (2012)
S Safa, R Azimirad, K Mohammadi, R Hejazi and A Khayatian Measurement 73 588 (2015)
F Gu, D You, Z Wang, D Han and G. Guo Sens. Actuators B: Chem. 204 342 (2014)
H N Hieu, N M Vuong, H Jung, D M Jang, D Kim, H Kim and et al. J. Mater. Chem. 22 1127 (2012)
H Huang, J Liu, G He, Y Peng, M Wu, W Zheng and et al. RSC Adv. 5 101910 (2015)
C Peng, J Guo, W Yang, C Shi, M Liu, Y Zheng, and et al. J. Alloys Compd. 654 371 (2016)
T Kondo, Y Sato, M Kinoshita P Shankar, N N. Mintcheva, M Honda and et al. Jpn. J. Appl. Phys. 56 080304 (2017)
A Bagheri Khatibani and M Abbasi J. Sol–Gel Sci. Technol. 86 255 (2018)
A Bagheri Khatibani Journal of Electronic Materials 48 3784 (2019)
Y H Navale, S T Navale, N S Ramgir, F J Stadler, S K Gupta, D K Aswal and et al. Sens. Actuators B: Chem. 251 551 (2017)
A Nandi, R Majumder, P Nag, S K Datta, H Saha and S Majumdar J. Mater. Sci.: Mater. Electron. 28 10885 (2017)
S A Bidier, M R Hashim and M Bououdina J. Mater. Sci.: Mater. Electron. 28 11178 (2017)
A N Naveen and S Selladurai Electrochim. Acta 125 404 (2014)
C Zhang, X Geng, J Li, Y Luo and P Lu Sensors and actuators B: chemical 248 886 (2017)
A M Soleimanpour, Y Hou and A H Jayatissa Sens. Actuators B: Chem. 182 125 (2013)
A Bagheri Khatibani, M Abbasi and S M Rozati Acta Phys. Polon. A 129 1245 (2016)
R Mariappan, V Ponnuswamy and M Ragavendar Mater. Sci. Semicond. Process. 16 1328 (2013)
S Wei, S Wang, Y Zhang and M Zhou Sens. Actuators B: Chem. 192 480 (2014)
D Ju, H Xu, J Zhang, J Guo and B Cao Sens. Actuators B: Chem. 201 444 (2014)
J Liu, T Wang, B Wang, P Sun, Q Yang, X Liang and et al. Sens. Actuators B: Chem. 245 551 (2017)
A Bagheri Khatibani and M Abbasi J. Mater. Sci.: Mater. Electron. 26 5052 (2015)
N L Tarwal, A R Patil, N S Harale, A V Rajgure, S S Suryavanshi, W.R. Bae and et al. J. Alloys Compd. 598 282 (2014)
S H Yan, S Y Ma, W Q Li, X L Xu, L Cheng, H S Song and et al. Sens. Actuators B: Chem. 221 88 (2015)
C Zhang, M Debliquy, A Boudiba, H Liao and C Coddet Sens. Actuators B: Chem. 144 280 (2010)
T Siciliano, A Tepore, G Micocci, A Genga, M Siciliano and E Filippo Sens. Actuators B: Chem. 138 207 (2009)
G Zheng, P Zhu, L Sun, J Jiang, J Liu, X Wang and et al. AIP Adv. 6 125306 (2016)
A G Hernandez, Y Kudriavtsev, T V K Karthik and R Asomoza J. Mater. Sci.: Mater. Electron. 30 6660 (2019)
M Dwivedi, J Bhargava, A Sharma, V Vyas and G. Eranna IEEE Sens. J. 14 1577 (2014)
P K Basu, P Bhattacharyya, N Saha, H Saha and S. Basu Sensors and actuators B: chemical 133 357 (2008).
A Jamshidi Bandari and S Nasirian J. Mater. Sc.: Mater. Electron. 30 10073 (2019)
H Zhang, Y Long, Z Li and B Sun Vacuum 101 113 (2014)
R Sankar Ganesh, M Navaneethan, G K Mani, S Ponnusamy, K Tsuchiya, C Muthamizhchelvan and et al. J. Alloys Compd. 698 555 (2017)
Z Aghagoli and M Ardyanian Nasirian J. Mater. Sci.: Mater. Electron. 29 7130 (2018)
Acknowledgements
The author would like to appreciate Mozhdeh Abbasi for her responsible partnership to prepare this article, especially in the sensor section. The author specially thanks Mr. Hamid R. Rahbari and Dr. Siamak Golshahi for their useful and valuable guidance.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Khatibani, A.B. Investigation of gas sensing property of zinc oxide thin films deposited by Sol-Gel method: effects of molarity and annealing temperature. Indian J Phys 95, 243–252 (2021). https://doi.org/10.1007/s12648-020-01689-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12648-020-01689-4