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Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

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Abstract

We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm2/Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.

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Correspondence to Unyong Jeong.

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Lee, S.W., Shin, M., Park, J. et al. Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding. Macromol. Res. 21, 311–314 (2013). https://doi.org/10.1007/s13233-013-1119-1

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  • DOI: https://doi.org/10.1007/s13233-013-1119-1

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