Abstract
Solution-processed zinc-tin-oxide film was coated by electrohydrodynamic (EHD) jet. By using EHD spray technique, zinc-tin-oxide (ZTO) TFT was prepared and characterized for the first time. The optimized process parameters were as follows: an electrical voltage of 3 KV to apply nozzle, a solution pursing of 0.032 µl per sec, a distance of 45 mm between nozzle and substrate for 30 sec with a 0.3 M of ZTO solution. The electrical properties were obtained as follows; a mobility of 2.0 cm2/Vs, a current ratio Ion/Ioff of 105, a threshold voltage of −10 V, a subthreshold slope of 1.74 V/dec. Based on this result, more in-depth research should be performed in this specific area for further development and electronic applications.
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Kwack, YJ., Choi, WS. Solution-processed zinc-tin-oxide thin-film transistor by electrohydrodynamic spray. Electron. Mater. Lett. 8, 341–344 (2012). https://doi.org/10.1007/s13391-012-1069-3
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DOI: https://doi.org/10.1007/s13391-012-1069-3