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Graphene p-n junction formed on SiC(0001) by Au intercalation

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Abstract

We propose a method to fabricate the chemical p-n junction in wafer-scale epitaxial graphene. In the case of Au intercalation in between graphene and SiC(0001), there exist two structurally distinct phases that result in p-type and n-type doping in the graphene layer, respectively. In the process of in situ Au deposition on our samples, we used a shadow mask to form a sharp junction of different Au coverage. The intercalation of Au atoms induced by thermal annealing leads to the abrupt p-n junction in the graphene layer, which is characterized by angle-resolved photoemission spectroscopy. This p-n junction of graphene is abrupt in the scale comparable to the beam size of approximately 50 μm. This p-n junction of graphene is expected to be atomically abrupt, since there exist only two structurally distinct phases by self-assembly. The proposed method may be useful not only to fabricate a wafer-scale p-n junction of graphene, but also for a fundamental study on atomically abrupt graphene p-n junction.

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Acknowledgements

This work was supported by the National Research Foundation (NRF) of Korea (Grants no. NRF-2020R1A2C2102469, NRF-2017R1A5A1014862, NRF-2020K1A3A7A09080364), and the Future-leading Research Initiative of Yonsei University (2019-22-0079).

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Authors and Affiliations

  1. Department of Physics, College of Science, Yonsei University, Seoul, 03722, Korea

    Yeongsup Sohn, Woo Jong Shin, Sae Hee Ryu, Minjae Huh, Seyeong Cha & Keun Su Kim

  2. Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Korea

    Yeongsup Sohn, Woo Jong Shin, Sae Hee Ryu & Minjae Huh

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  1. Yeongsup Sohn
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  2. Woo Jong Shin
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Correspondence to Keun Su Kim.

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Sohn, Y., Shin, W.J., Ryu, S.H. et al. Graphene p-n junction formed on SiC(0001) by Au intercalation. J. Korean Phys. Soc. 78, 40–44 (2021). https://doi.org/10.1007/s40042-020-00010-0

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  • DOI: https://doi.org/10.1007/s40042-020-00010-0

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