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Influence of post-annealing on Mn-doped (K0.5Na0.5)NbO3 thin films

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Abstract

In this work, we synthesized the Mn-doped (K0.5Na0.5)NbO3 (KNMN) thin films via RF-magnetron sputtering. The effect of the post-annealing temperature on the KNMN film was studied in terms of its structural, ferroelectric, and leakage current properties. We achieved a single perovskite phase in KNMN film. The crystalline quality of the KNMN film was improved further via post-annealing the thin film in the rapid temperature process (RTP), the increase in the intensity of the (100) peak as well as the identification of the additional (200) diffraction peak. The increase in the ferroelectric performance and the reduction in the leakage current density of the post-annealed KNMN film were attributed to the improved crystallinity of the KNMN film. Based on the X-ray photoelectron spectroscopy results, we noticed that the effect of both the chemisorbed layer and the oxygen vacancies was weakened further, thus increasing the crystalline quality of the KNMN film due to post-annealing.

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Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1I1A3068422). This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A6A1A11053838).

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Authors and Affiliations

  1. Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea

    Muhammad Sheeraz, Bich Thuy Nguyen, Shinuk Cho, Tae Heon Kim, Chang Won Ahn & Ill Won Kim

  2. School of Materials Science and Engineering, University of Ulsan, Ulsan, 44776, Republic of Korea

    Hyung-Su Han

  3. Busan Center, Korea Basic Science Institute (KBSI), Busan, 46742, Republic of Korea

    Jong-Seong Bae

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  1. Muhammad Sheeraz
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Correspondence to Ill Won Kim.

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Sheeraz, M., Nguyen, B.T., Han, HS. et al. Influence of post-annealing on Mn-doped (K0.5Na0.5)NbO3 thin films. J. Korean Phys. Soc. 80, 628–633 (2022). https://doi.org/10.1007/s40042-022-00450-w

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