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Optimization of Ultrasonic-Assisted Polishing SiC Through CFD Simulation

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Abstract

In this paper, a detailed simulation about ultrasonic-assisted polishing was conducted, which is helpful to understand the contribution of the ultrasonic vibration to polishing. The influence of ultrasonic vibration on flow field parameters and optimal ultrasonic parameters was investigated. Results indicate that ultrasonic vibration can produce a cavitation phenomenon, which can contribute to improving the polishing quality and material removal rate (MRR). Optimal ultrasonic frequency, amplitude and film thickness were 42 μm, 25 kHz and 14 mm, respectively. Furthermore, the required minimum film thickness was 1.5 mm, at which cavitation could occur normally. At last, contrast experiment indicated that polishing quality and MRR were much improved when using ultrasonic-assisted polishing. After polishing, there were only a few scratches and MRR was 0.68 μm/h compared with many scratches and 0.32 μm/h MRR of traditional polishing.

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Acknowledgements

This work is financially supported by the National Natural Science Foundation of China (Project No. 51475119).

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Authors and Affiliations

  1. Mechatronics Engineering, Harbin Institute of Technology, No. 92, Xidazhi Street, Nangang District, Harbin, 150001, Heilongjiang Province, People’s Republic of China

    Wenjie Zhai, Bo Gao, Jingzhong Chang & Hongxiang Wang

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  1. Wenjie Zhai
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  2. Bo Gao
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  3. Jingzhong Chang
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  4. Hongxiang Wang
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Correspondence to Bo Gao.

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Zhai, W., Gao, B., Chang, J. et al. Optimization of Ultrasonic-Assisted Polishing SiC Through CFD Simulation. Nanomanuf Metrol 2, 36–44 (2019). https://doi.org/10.1007/s41871-018-0033-8

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  • DOI: https://doi.org/10.1007/s41871-018-0033-8

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