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Percolation Induced Metal–Insulator Transition in 2D Si/SiGe Quantum Wells

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Abstract

Since the first observations metallic behavior in Si-MOSFETs (Silicon-Metal Oxide Semiconductor Field Effect Transistor), the nature of the metal insulator transition in two-dimensional (2D) systems has remained a controversial issue and the temperature coefficient of conductivity (TCC = dσ/dT) can give a false conception on the critical density of the transition from a metallic side to an insulating side (or vice versa). In this paper the density (p) dependence of the conductivity of 2D hole gas confined in gated Si/SiGe/Si quantum wells was analyzed in the metallic side (p ≥ 1.61011 cm−2) at very low temperature. Our investigation reveals a density inhomogeneity driven percolation-type transition and gives values of the critical densities lower than those indicated by the sign of the slope dσ/dT.

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Acknowledgements

We are grateful to Professor M. D’Iorio from « National Research Council of Canada, IMS, Ottawa » to have allowed us to use his experimental results in Si/SiGe Quantum Wells. We are also grateful to the Publications Marketing Coordinator of the APS for granting his permission.

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Authors and Affiliations

  1. Physics Department, Faculty of Sciences, University Ibn Zohr, B. P 8106, Hay Dakhla, 80000, Agadir, Morocco

    S. Dlimi & A. El Kaaouachi

  2. Physics Department, Faculty of Sciences and Technics, University Moulay Ismail, Boutalamine BP 509, 52000, Errachidia, Morocco

    L. Limouny

  3. Nanomaterials for Energy and Environment Laboratory (LN2E, Ex. LPSCM), Physics Department, Faculty of Sciences Semlalia, Cadi Ayyad University, PO Box 2390, 40000, Marrakech, Morocco

    A. Narjis

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  1. S. Dlimi
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  2. A. El Kaaouachi
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  3. L. Limouny
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  4. A. Narjis
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Correspondence to S. Dlimi.

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Dlimi, S., El Kaaouachi, A., Limouny, L. et al. Percolation Induced Metal–Insulator Transition in 2D Si/SiGe Quantum Wells. Trans. Electr. Electron. Mater. 23, 457–461 (2022). https://doi.org/10.1007/s42341-021-00364-7

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