Skip to main content
SpringerLink
Log in

Deep-Level Effects in GaAs Microelectronics: A Review

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

A considerable body of research literature on deep centers in GaAs is analyzed. It is shown that the issue remains most relevant to GaAs microelectronics. Data are discussed on the nature of deep centers in the bulk-grown and epitaxial forms of GaAs, whether ion-implanted or undoped. Methods for the characterization of deep centers are described. Theoretical models representing the influence of deep centers on the parameters of devices and ICs are considered. Particular coverage is given to backgating. Practical recommendations are reviewed for controlling the adverse effects of deep centers on the performance of GaAs devices and ICs.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. Mil'vidskii, M.G. and Osvenskii, V.B. Strukturnye defekty v monokristallakh poluprovodnikov (Structural Imperfections in Semiconductor Single Crystals), Moscow: Metallurgiya, 1984, p. 159.

    Google Scholar 

  2. Mil'vidskii, M.G. and Osvenskii, V.B., Strukturnye defekty v epitaksial'nykh sloyakh poluprovodnikov 1986, vols. 10-12, pp. 1213–1218.

    Google Scholar 

  3. Martin, G.M., Mitonneau, A., and Mircea, A., Electron. Lett., 1977, vol. 13, no. 7, pp. 191–193.

    Google Scholar 

  4. Auret, F.D., Leitch, A.W.R., and Vermaak, J.S., J. Appl. Phys., 1986, vol. 59, no. 1, pp. 158–163.

    Google Scholar 

  5. Ghezzi, C., Gombia, E., and Vanzetti, L., Defects in Semiconductors, Mater. Sci. Forum, 1986, vols. 10-12, pp. 1213–1218.

    Google Scholar 

  6. Partin, D.L., Chen, J.W., Milnes, A.G., and Vassamillet, L.F., J. Appl. Phys., 1974, vol. 50, no. 11, pp. 6845–6859.

    Google Scholar 

  7. Auret, F.D., Nel, M., and Leitch, A.W.R., J. Cryst. Growth, 1988, vol. 89, nos. 2-3, pp. 308–312.

    Google Scholar 

  8. Fang, Z.-Q., Schlesinger, T.E., and Milnes, A.G., J. Appl. Phys., 1987, vol. 61, no. 11, pp. 5047–5050.

    Google Scholar 

  9. Mitonneau, A., Martin, G.M., and Mircea, A., Electron. Lett., 1977, vol. 13, no. 22, pp. 666–668.

    Google Scholar 

  10. Kravchenko, A.R. and Prints, V.Ya., Deep-Level Transient Spectroscopy of Impurities and Defects in III-V Semiconductors, Preprint 35-79, Novosibirsk, 1979, pp. 1–43.

  11. Brattaharya, P.K., Ku, T.W., Owen, S.J.J., Aebi, V., Cooper, C.B., and Moon, R.L., Appl. Phys. Lett., 1980, vol. 36, no. 42, pp. 304–306.

    Google Scholar 

  12. Kitagawa, A., Usami, A., Wada, T., and Tokuda, H., J. Appl. Phys., 1989, vol. 65, no. 2, pp. 606–611.

    Google Scholar 

  13. Pons, D., Mooney, P.M., and Bourgain, T.C., J. Appl. Phys., 1980, vol. 51, no. 4, pp. 2038–2041.

    Google Scholar 

  14. Ruby, D.S., Arai, K., and Stillman, G.B., J. Appl. Phys., 1985, vol. 58, no. 2, pp. 825–830.

    Google Scholar 

  15. Katayama, M., Usami, A., Wada, T., and Tokuda, Y., J. Appl. Phys., 1987, vol. 62, no. 2, pp. 528–833.

    Google Scholar 

  16. Martin, G.M. and Makram-Ebeid, S., Deep Centers in Semiconductors: A State of the Art Approach, Pantelides, S.T., Ed., New York: Gordon and Breach, 1986, pp. 399–487.

    Google Scholar 

  17. Guillot, G., Rev. Phys. Appl., 1998, vol. 23, no. 5, pp. 804–816.

    Google Scholar 

  18. Meyer, B.K., Rev. Phys. Appl., 1988, vol. 23, no. 5, pp. 809–816.

    Google Scholar 

  19. Steinegger, T., Crundig-Wendrock, B., Baeumler, M., Turisch, M., Jantz, W., and Niklas, J.R., Mater. Sci. Eng., B, 2002, vols. 19-22, pp. 29–32.

    Google Scholar 

  20. Gloriozova, R.I., Grishina, S.P., Kolesnik, L.I., Omel'yanovskii, E.M., and Polyakov, A.Ya., Fiz. Tekh. Poluprovodn. (Leningrad), 1984, vol. 18, issue 8, pp. 1450–1456.

    Google Scholar 

  21. Makhmudov, A.Sh., Adilov, M.K., and Levin, A.A., Fiz. Tekh. Poluprovodn. (Leningrad), 1985, vol. 18, issue 11, pp. 2077–2080.

  22. Dindo, S., Abdel-Motaleb, J., Tang, W., and Jong, L., J. Electrochem. Soc., 1985, vol. 132, no. 11, pp. 2673–2677.

    Google Scholar 

  23. Bobrova, E.A., Galkin, G.N., Oplesnin, V.N., and Tigishvili, M.G., Poverkhnost Fiz. Khim. Mekh., 1991, no. 3, pp. 130–135.

  24. Guilai, J., Mayer, J.W., and Mitchell, T.V., Appl. Phys. Lett., 1970, vol. 17, no. 8, pp. 332–334.

    Google Scholar 

  25. Blattner, R.J. and Evans, C.A., J. Electrochem. Soc., 1977, vol. 124, no. 11, pp. 1781–1784.

    Google Scholar 

  26. Diegner, B., Weinert, H., Pickenhain, R., and Norig, W., Phys. Status Solidi A, 1986, vol. 97, no. 1, pp. 313–321.

    Google Scholar 

  27. Blood, P. and Yarris, J.T., J. Appl. Phys., 1984, vol. 56, no. 4, pp. 993–1007.

    Google Scholar 

  28. Brehme, S. and Pickenhein, R., Solid State Commun., 1986, vol. 59, no. 7, pp. 464–471.

    Google Scholar 

  29. Bobrova, E.A., Galkin, G.N., Kudryavtseva, T.N., Sveshnikov, Yu.N., and Tigishvili, M.G., Kratk. Soobshch. Fiz., 1990, no. 3, pp. 21–23.

  30. Prints, V.Ya. and Getalov, V.S., Elektron. Tekh., Ser. Materialy, 1980, issue 1, pp. 48–52.

  31. Allsopp, D., Semicond. Sci. Technol., 1987, vol. 2, no. 2, pp. 129–135.

    Google Scholar 

  32. Lang, D.V., J. Appl. Phys., 1974, vol. 45, no. 7, pp. 3023–3032.

    Google Scholar 

  33. Look, D.C., Fang, Z.-Q., Yamamoto, H., Sizelove, J.R., Mier, M.G., and Stutz, C.E., J. Appl. Phys., 1994, vol. 76, no. 2, pp. 1029–1032.

    Google Scholar 

  34. Look, D.C., Fang, Z.-Q., and Sizelove, J.R., J. Appl. Phys., 1995, vol. 77, no. 4, pp. 1407–1410.

    Google Scholar 

  35. Look, D.C. and Sizelove, J.R., J. Appl. Phys., 1995, vol. 78, no. 4, pp. 2848–2850.

    Google Scholar 

  36. Halder, N.C. and Zhao, X., J. Vac. Sci. Technol., B, 1999, vol. 17, no. 5, pp. 2019–2024.

    Google Scholar 

  37. Lehovec, K., Appl. Phys. Lett., 1975, vol. 26, no. 3, pp. 82–84.

    Google Scholar 

  38. Adlerstein, M.G., Electron. Lett., 1976, vol. 12, no. 12, pp. 297–298.

    Google Scholar 

  39. Jin, G. and Jones, B.K., Semicond. Sci. Technol., 1990, vol. 5, no. 5, pp. 395–403.

    Google Scholar 

  40. Abdala, M.A. and Jones, B.K., Solid-State Electron., 1993, vol. 36, no. 2, pp. 237–245.

    Google Scholar 

  41. Abdala, M.A. and Jones, B.K., Solid-State Electron., 1992, vol. 35, no. 12, pp. 1713–1719.

    Google Scholar 

  42. Sengouga, N. and Jones, B.K., Solid-State Electron., 1993, vol. 36, no. 2, pp. 229–236.

    Google Scholar 

  43. Sengouga, N. and Jones, B.K., IEEE Trans. Electron Devices, 1993, vol. 40, no. 3, pp. 471–478.

    Google Scholar 

  44. Chan, Y.-J. and Pavlidis, D., IEEE Trans. Electron Devices, 1994, vol. 41, no. 5, pp. 637–642.

    Google Scholar 

  45. Paccagnella, A., Tedesco, C., Canali, C., Cetronio, A., and Lanzieri, C., Electron. Lett., 1992, vol. 28, no. 22, pp. 2107–2108.

    Google Scholar 

  46. Reynoso-Hernandez, J.A., Escotte, L., Plana, R., and Graffeuil, J., Electron. Lett., 1995, vol. 31, no. 8, pp. 677–678.

    Google Scholar 

  47. Gorev, N.B., Kostylev, S.A., Makarova, T.V., Prokhorov, E.F., and Ukolov, A.T., Fiz. Tekh. Poluprovodn. (St. Petersburg), 1992, vol. 26, issue 5, pp. 861–867

    Google Scholar 

  48. Kostylev, S.A., Prokhorov, E.F., Gorev, N.B., Kodzhespirova, I.F., and Kovalenko, Yu.A., Solid-State Electron., 1999, vol. 43, no. 1, pp. 169–176.

    Google Scholar 

  49. González-Hernández, J., Prokhorov, E., Gorev, N.B., Kodzhespirova, I.F., and Kovalenko, Yu.A., J. Vac. Sci. Technol., B, 1999, vol. 17, no. 5, pp. 2357–2360.

    Google Scholar 

  50. Lomidze, A.M., Khvedelidze, L.V., Khuchua, N.P., and Chkhartishvili, L.S., USSR Inventor's Certificate no. 1 336862, 1986.

  51. Lomidze, A.M., Khvedelidze, L.V., Khuchua, N.P., and Chkhartishvili, L.S., Elektron. Tekh., Ser. 3, 1987, issue 2, pp. 16–24.

  52. Khuchua, N.P., Khvedelidze, L.V., Gorev, N.V., Privalov, E.N., and Shur, M.S., Solid-State Electron., 2002, vol. 46, no. 9, pp. 1463–1466.

    Google Scholar 

  53. Horio, K., Fuseya, Y., Kusuki, H., and Yanai, H., IEEE Trans. Microwave Theory Tech., 1989, vol. 37, no. 9, pp. 1371–1379.

    Google Scholar 

  54. Horio, K., Asada, K., and Yanai, H., Solid-State Electron., 1991, vol. 34, no. 4, pp. 335–343.

    Google Scholar 

  55. Horio, K., Fuseya, Y., Kusuki, H., and Yanai, H., IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 1991, vol. 10, no. 10, pp. 1295–1302.

    Google Scholar 

  56. Son, I. and Tang, T.-W., IEEE Trans. Electron Devices, 1989, vol. 36, no. 4, pp. 632–640.

    Google Scholar 

  57. Li, Q. and Dutton, R.W., IEEE Trans. Electron Devices, 1991, vol. 38, no. 6, pp. 1285–1287.

    Google Scholar 

  58. Yuan, J.S., Int. J. Electron., 1993, vol. 74, no. 1, pp. 51–58.

    Google Scholar 

  59. Conger, J., Peczalski, A., and Shur, M.S., IEEE J. Solid-State Circuits, 1994, vol. 29, no. 1, pp. 71–76.

    Google Scholar 

  60. Gorev, N.B., Makarova, T.V., Prokhorov, E.F., Ukolov, A.T., and Eppel', V.I., Elektron. Tekh., Ser.1, 1993, issues 5-6, pp. 27–30.

  61. Gorev, N.B., Kovalenko, Yu.A., Kodzhespirova, I.F., and Prokhorov, E.F., in Radiofizika i elektronika (Radio Science and Electronics), Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 1998, vol. 3, issue 3, pp. 103–105.

    Google Scholar 

  62. Shur, M., GaAs Devices and Circuits, New York: Plenum, 1987. Translated under the title Sovremennye pribory na osnove arsenida galliya, Moscow: Mir, 1991.

    Google Scholar 

  63. Itoh, T. and Yanai, H., IEEE Trans. Electron Devices, 1980, vol. 27, no. 6, pp. 1037–1045.

    Google Scholar 

  64. Kitahara, K., Nakai, K., Shibatomi, A., and Ohkawa, S., Jpn. J. Appl. Phys., Part 1, 1982, vol. 21, no. 3, pp. 513–516.

    Google Scholar 

  65. Lee, C.P., Lee, S.J., and Welch, B.M., IEEE Electron Device Lett., 1982, vol. 3, no. 4, pp. 97–98.

    Google Scholar 

  66. Lampert, M.A. and Mark, P., Current Injection in Solids, New York: Academic, 1970. Translated under the title Inzhektsionnye toki v tverdykh telakh, Moscow: Mir, 1973.

    Google Scholar 

  67. Makram-Ebeid, S. and Minondo, P., IEEE Trans. Electron Devices, 1985, vol. 32, no. 3, pp. 632–642.

    Google Scholar 

  68. Chang, M.F., Lee, S.P., Hou, L.D., Vahrenkamp, R.P., and Kirkpatrik, C.G., Appl. Phys. Lett., 1984, vol. 44, no. 9, pp. 869–871.

    Google Scholar 

  69. Das, M. and Shiram, S., Solid-State Electron., 1985, vol. 28, no. 10, pp. 979–989.

    Google Scholar 

  70. Li, Z.-M., Day, D.J., McAlister, S.P., and Hurd, C.M., IEEE Electron Device Lett., 1990, vol. 11, no. 8, pp. 342–345.

    Google Scholar 

  71. Li, Z.-M., McAlister, S.P., McMullan, W.G., and Hurd, C.M., J. Appl. Phys., 1990, vol. 67, no. 12, pp. 7368–7372.

    Google Scholar 

  72. Zhao, F., Xia, G., Du, L., and Tan, H., J. Appl. Phys., 1999, vol. 85, no. 1, pp. 604–607.

    Google Scholar 

  73. Gergel', V.A., Il'ichev, V.A., and Luk'yanchenko, A.I., Fiz. Tekh. Poluprovodn. (Leningrad), 1990, vol. 24, issue 12, pp. 2111–2116.

    Google Scholar 

  74. GaAs Microelectronics, Einspruch, N.G. and Wisseman, W.R., Eds., VLSI Electronics: Microstructure Science, vol. 11, Orlando, Fla.: Academic, 1985. Translated under the title Arsenid galliya v mikroelektronike, Moscow: Mir, 1988.

    Google Scholar 

  75. Kostylev, S.A., Prokhorov, E.F., Gorev, N.B., Kodzhespirova, I.F., and Kovalenko, Yu.A., Solid-State Electron., 1997, vol. 41, no. 12, pp. 1923–1927.

    Google Scholar 

  76. Prokhorov, E.F., Gorev, N.B., Kodzhespirova, I.F., and Kovalenko, Yu.A., Mikroelektronika, 2000, vol. 31, no. 4, pp. 267–269.

    Google Scholar 

  77. Gergel', V.A., Il'ichev, V.A., Luk'yanchenko, A.I., Poltoratskii, E.A., and Shchamkhalov, K.S., Fiz. Tekh. Poluprovodn. (St. Petersburg), 1992, vol. 26, issue 5, pp. 794–780.

    Google Scholar 

  78. Sengouga, N. and Jone, B.K., Solid-State Electron., 1995, vol. 38, no. 7, pp. 1413–1421.

    Google Scholar 

  79. Ogawa, M. and Kamiya, T., IEEE Trans. Electron Devices, 1985, vol. 32, no. 3, pp. 571–576.

    Google Scholar 

  80. Subramanian, S., Bhattacharya, P.K., Kirk, J.S., Closh, C.L., and Radawi, M.H., IEEE Trans. Electron Devices, 1985, vol. 32, no. 1, pp. 28–33.

    Google Scholar 

  81. D'Avanzo, D.C., IEEE Trans. Electron Devices, 1982, vol. 29, no. 7, pp. 1051–1059.

    Google Scholar 

  82. Khvedelidze, L.V. and Khuchua, N.P., Zarubezh. Elektron. Tekh., 1987, no. 9, pp. 9–93.

  83. Goto, N., Ohno, Y., and Yano, H., IEEE Trans. Electron Devices, 1990, vol. 37, no. 8, pp. 1821–1827.

    Google Scholar 

  84. Liu, Y., Dutton, R.W., and Deal, M.D., IEEE Electron Device Lett., 1990, vol. 11, no. 11, pp. 505–507.

    Google Scholar 

  85. Liu, Y., Dutton, R.W., and Deal, M.D., IEEE Electron Device Lett., 1992, vol. 13, no. 11, pp. 149–151.

    Google Scholar 

  86. Ayyar, S.G., IEEE Electron Device Lett., 1992, vol. 13, no. 10, p. 547.

    Google Scholar 

  87. Liu, Y., Dutton, R.W., and Deal, M.D., IEEE Electron Device Lett., 1992, vol. 13, no. 10, pp. 547–548.

    Google Scholar 

  88. Shulman, D.D. and Young, L., Jpn. J. Appl. Phys., Part 1, 1992, vol. 31, no. 5A, pp. 1303–1304.

    Google Scholar 

  89. Shulman, D.D. and Young, L., J. Appl. Phys., 1991, vol. 70, no. 11, pp. 7149–7155.

    Google Scholar 

  90. Shulman, D.D. and Young, L., IEEE Trans. Electron Devices, 1992, vol. 39, no. 11, pp. 2623–2626.

    Google Scholar 

  91. Chang, S.-J. and Lee, C.-P., IEEE Trans. Electron Devices, 1993, vol. 40, no. 4, pp. 698–704.

    Google Scholar 

  92. Chang, S.-J. and Lee, C.-P., Solid-State Electron., 1993, vol. 36, no. 10, pp. 1455–1464.

    Google Scholar 

  93. Harrison, A., IEEE Electron Device Lett., 1992, vol. 13, no. 8, pp. 381–383.

    Google Scholar 

  94. Allan, D.A., Smith, P.J., and Bowiel, T., Vacuum, 1985, vol. 35, no. 12, pp. 543–546.

    Google Scholar 

  95. Miyazawa, S., Watanade, K., Osaka, J., and Ikuta, K., Rev. Phys. Appl., 1988, vol. 23, no. 5, pp. 727–738.

    Google Scholar 

  96. Sethi, S., Mausfield, J., and Bhattacharya, P.K., IEEE Electron Device Lett., 1995, vol. 16, no. 12, pp. 537–539.

    Google Scholar 

  97. Gergel', V.A., Il'ichev, V.A., Poltoratskii, E.A., Rodionov, A.V., Tarnavskii, S.V., and Fedorenko, A.V., Fiz. Tekh. Poluprovodn. (St. Petersburg), 1991, vol. 25, issue 11, pp. 1870–1876.

    Google Scholar 

  98. Gergel', V.A., Il'ichev, V.A., Poltoratskii, E.A., Rodionov, A.V., Tarnavskii, S.V., and Fedorenko, A.V., Pis'ma Zh. Eksp. Teor. Fiz., 1991, vol. 17, no. 1, pp. 78–90.

    Google Scholar 

  99. Lee, S.T., IEEE Trans. Electron. Devices, 1984, vol. 31, no. 2, pp. 245–250.

    Google Scholar 

  100. Goronkin, H., Birrittella, M.S., Seelbach, W.C., and Vaitkus, R.L., IEEE Trans. Electron. Devices, 1982, vol. 29, no. 5, p. 845.

    Google Scholar 

  101. Smith, F.W., Calawa, A.R., Chen, C.L., Manfra, M.J., and Mahoney, L.J., IEEE Electron Device Lett., 1988, vol. 9, no. 2, pp. 77–80.

    Google Scholar 

  102. Warren, C., Woodall, J.M., Frecouf, J.L., Grischkowsky, D., McInturff, D.T., Mellocj, M.R., and Otsuka, M., Appl. Phys. Lett., 1990, vol. 57, p. 1331.

    Google Scholar 

  103. Bond, A.E., Lin, C.-K., Macbougal, M.H., Dapkus, P.D., Kaviani, K., Adamcsyk, O., and Nottenburg, R., Electron. Lett., 1996, vol. 32, no. 24, pp. 2271–2272.

    Google Scholar 

  104. Il'ichev, V.A., Poltoratskii, E.A., Rychkov, G.S., Reshetnikov, S.E., Rodionov, A.V., and Fedorenko, A.V., Elektron. Tekh., Ser. 3, 1972, no. 2/14, pp. 14–17.

  105. Il'ichev, V.A., Poltoratskii, E.A., and Rychkov, G.S., Elektronika, 1996, vol. 25, no. 1, pp. 71–85.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Tbilisi State University, Tbilisi, Georgia

    N. P. Khuchua, L. V. Khvedelidze & M. G. Tigishvili

  2. Institute of Technical Mechanics, National Academy of Sciences of Ukraine, Dnepropetrovsk, Ukraine

    N. B. Gorev, E. N. Privalov & I. F. Kodzhespirova

Authors
  1. N. P. Khuchua
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. V. Khvedelidze
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. G. Tigishvili
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. N. B. Gorev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. N. Privalov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. I. F. Kodzhespirova
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Khuchua, N.P., Khvedelidze, L.V., Tigishvili, M.G. et al. Deep-Level Effects in GaAs Microelectronics: A Review. Russian Microelectronics 32, 257–274 (2003). https://doi.org/10.1023/A:1025528416032

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1025528416032

Keywords

Search

Navigation