Abstract
The electroluminescence of the single unconfined type-II heterojunction p-GaInAsSb/p-InAs was investigated in the temperature range T=4.2–77 K. As the temperature was reduced below T=77 K, the luminescence bands with maxima at 311 meV (band A) and 384 meV (band B) were found to shift toward higher energies. At 4.2 K, the short-wave band split into two bands, B 1 and B 2. These results are explained in terms of a model involving recombinations of electrons from the conduction band to an acceptor level of InAs, and also recombinations of electrons and holes localized in self-consistent quantum wells on either side of the heterojunction.
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Fiz. Tekh. Poluprovodn. 31, 1216–1219 (October 1997)
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Bazhenov, N.L., Zegrya, G.G., Ivanov-Omskii, V.I. et al. Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures. Semiconductors 31, 1046–1048 (1997). https://doi.org/10.1134/1.1187022
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DOI: https://doi.org/10.1134/1.1187022