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Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility

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Abstract

Magnetic and magnetotransport properties of GaAs(δ〈Mn〉)/In0.17Ga0.83As/GaAs quantum wells with different Mn concentrations are studied. The delta-doped manganese layer has been separated from the GaAs quantum well with a spacer with an optimal thickness (3 nm), which has provided a sufficiently high hole mobility (≥103 cm2V−1 s−1) in the quantum wells and their effective exchange with Mn atoms. It is found that the anomalous Hall effect (AHE) is exhibited only in a restricted temperature range above and below the Curie temperature, while the AHE is not observed in quantum wells with quasi-metallic conductivity. Thus, it is shown that the use of the AHE is inefficient in studying magnetic ordering in semiconductor systems with high-mobility carriers. The features observed in the behavior of the resistance, magnetoresistance, and Hall effect are discussed in terms of the interaction of holes with magnetic Mn ions with regard to fluctuations of their potential, hole transport on the percolation level, and hopping conduction.

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References

  1. I. Žutić, O. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004).

    Article  ADS  Google Scholar 

  2. B. P. Zakharchenya and V. L. Korenev, Usp. Fiz. Nauk 175, 629 (2005).

    Article  Google Scholar 

  3. H. Ohno, Science 291, 840 (2001); H. Ohno and F. Matsukura, Solid State Commun. 117, 179 (2001).

    Article  Google Scholar 

  4. T. Jungwirth, Jairo Sinova, J. Masek, et al., Rev. Mod. Phys. 78, 809 (2006).

    Article  ADS  Google Scholar 

  5. P. M. Krstajić, F. M. Peeters, V. A. Ivanov, et al., Phys. Rev. B 70, 195215 (2004).

    Google Scholar 

  6. K. W. Edmonds, K. Y. Wang, R. P. Campion, et al., Appl. Phys. Lett. 81, 3010 (2003).

    Article  ADS  Google Scholar 

  7. Sh. U. Yuldashev, H. Im, V. Sh. Yalishev, et al., Appl. Phys. Lett. 82, 1206 (2003).

    Article  ADS  Google Scholar 

  8. A. M. Nazmul, T. Amemiya, Y. Shuto, et al., Phys. Rev. Lett. 95, 017201 (2005).

  9. T. Wojtowicz, W. L. Lim, X. Liu, et al., Appl. Phys. Lett. 83, 4220 (2003).

    Article  ADS  Google Scholar 

  10. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, Phys. Rev. B 57, 2037R (1998).

    Article  ADS  Google Scholar 

  11. H. Ohno, D. Chiba, F. Matsukura, et al., Nature 408, 944 (2000).

    Article  ADS  Google Scholar 

  12. V. V. Ryl’kov, B. A. Aronzon, K. I. Maslakov, et al., Zh. Éksp. Teor. Fiz. 127, 838 (2005) [JETP 100, 742 (2005)].

    Google Scholar 

  13. T. Jungwirth, Q. Niu, and A. H. McDonald, Phys. Rev. Lett. 88, 207208 (2002).

    Google Scholar 

  14. T. Jungwirth, J. Sinova, K. Y. Wang, et al., Appl. Phys. Lett. 83, 320 (2003).

    Article  ADS  Google Scholar 

  15. T. Dietl, F. Matsukura, H. Ohno, et al., condmat/0306484 (2003).

  16. Yu. V. Vasil’eva, Yu. N. Danilov, A. A. Ershov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 87 (2005) [Semiconductors 39, 77 (2005)]; B. A. Aronzon, A. B. Granovskiĭ, A. B. Davydov, et al., Fiz. Tverd. Tela (St. Petersburg) 49, 165 (2007) [Phys. Solid State 49, 171 (2007)].

    Google Scholar 

  17. I. J. Fritz, T. J. Drummond, G. C. Oshourn, et al., Appl. Phys. Lett. 48, 1678 (1986).

    Article  ADS  Google Scholar 

  18. A. Van Esch, L. Van Bockstal, J. De Boeck, et al., Phys. Rev. B 56, 13 103 (1997).

  19. H. Ohno, H. Munekata, T. Penney, et al., Phys. Rev. Lett. 68, 2664 (1992).

    Article  ADS  Google Scholar 

  20. F. Matsukura, M. Sawicki, T. Dietl, et al., Physica E (Amsterdam) 21, 1032 (2004).

    ADS  Google Scholar 

  21. B. I. Shklovskiĭ and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer, New York, 1984).

    Google Scholar 

  22. M. Tanaka, J. P. Harbison, J. DeBoeck, et al., Appl. Phys. Lett. 62 1565 (1993).

    Article  ADS  Google Scholar 

  23. C. Timm, J. Phys.: Condens. Matter 15, R1865 (2003).

    Article  ADS  Google Scholar 

  24. V. A. Gergel’ and R. A. Suris, Zh. Éksp. Teor. Fiz. 75, 191 (1978) [Sov. Phys. JETP 48, 95 (1978)].

    ADS  Google Scholar 

  25. S. Y. Liu and X. L. Lei, Phys. Rev. B 72, 195329 (2005).

  26. B. I. Shklovskiĭ, Zh. Éksp. Teor. Fiz. 72, 288 (1977) [Sov. Phys. JETP 45, 152 (1977)].

    Google Scholar 

  27. B. A. Aronzon, D. Yu. Kovalev, A. N. Lagar’kov, et al., Pis’ma Zh. Éksp. Teor. Fiz. 70, 87 (1999) [JETP Lett. 70, 90 (1999)].

    Google Scholar 

  28. V. N. Dobrovol’skiĭ and V. G. Litovchenko, Electron and Hole Transfer near Semiconductor Surface (Naukova Dumka, Kiev, 1995) [in Russian].

    Google Scholar 

  29. A. V. Vedyaev, A. B. Granovskiĭ, and O. A. Kotel’nikova, Kinetic Phenomena in Disordered Ferromagnetic Alloys (Mosk. Gos. Univ., Moscow, 1992) [in Russian].

    Google Scholar 

  30. A. Gerber, A. Milner, M. Karpovsky, et al., Phys. Rev. B 69, 134422 (2004).

  31. V. V. Ryl’kov, B. A. Aronzon, A. B. Davydov, et al., Zh. Éksp. Teor. Fiz. 121, 908 (2002) [JETP 94, 779 (2002)].

    Google Scholar 

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Authors and Affiliations

  1. Russian Research Centre Kurchatov Institute, Moscow, 123182, Russia

    B. A. Aronzon, A. B. Davydov & V. V. Ryl’kov

  2. Institute of Applied and Theoretical Electrodynamics, Russian Academy of Sciences, Moscow, 127412, Russia

    B. A. Aronzon, A. B. Davydov & V. V. Ryl’kov

  3. Faculty of Physics, Moscow State University, Moscow, 119992, Russia

    V. A. Kul’bachinskiĭ, P. V. Gurin & A. B. Granovskiĭ

  4. Research Physicotechnical Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    O. V. Vikhrova, Yu. A. Danilov & B. N. Zvonkov

  5. School of Science and Engineering, Waseda University, 3-4-1, Okubo, Tokyo, 169-8555, Japan

    Y. Horikoshi & K. Onomitsu

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  1. B. A. Aronzon
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  2. V. A. Kul’bachinskiĭ
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  3. P. V. Gurin
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  4. A. B. Davydov
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  5. V. V. Ryl’kov
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  6. A. B. Granovskiĭ
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  7. O. V. Vikhrova
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  8. Yu. A. Danilov
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  9. B. N. Zvonkov
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  10. Y. Horikoshi
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Additional information

Original Russian Text © B.A. Aronzon, V.A. Kul’bachinskiĭ, P.V. Gurin, A.B. Davydov, V.V. Ryl’kov, A.B. Granovskiĭ, O.V. Vikhrova, Yu.A. Danilov, B.N. Zvonkov, Y. Horikoshi, K. Onomitsu, 2007, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 85, No. 1, pp. 32–39.

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Aronzon, B.A., Kul’bachinskiĭ, V.A., Gurin, P.V. et al. Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility. Jetp Lett. 85, 27–33 (2007). https://doi.org/10.1134/S0021364007010067

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  • DOI: https://doi.org/10.1134/S0021364007010067

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