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Metal oxide semiconductors based on tin dioxide: Gas-sensitivity to methane in a wide range of temperatures, concentrations and humidities of the gas phase

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Abstract

The response of metal oxide semiconductors (MOSs) made by the thick-film technology on the basis of SnO2 with various catalytic additives was studied in dry gaseous media containing 200 ppm CH4 in the temperature range 100–600° C. Concentration dependence was studied for four sensors (on the basis of pure SnO2 and with three catalytic additives, 3% Pd, 1% Sb2O5 + 3% La2O3, and 1% Pt + 3% Pd) in the concentration range 1–20600 ppm CH4 at the humidity of the gas phase varied from 0 to 100%. It was found out that, in the strength of all performance and technical characteristics, the structure SnO2 + 1% Pt + 3% Pd working at 400°C and consuming ∼180 mW was the best for recording CH4.

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Authors and Affiliations

  1. Institute of Molecular Physics, Kurchatov Institute Russian Research Center, pl. Kurchatova 1, Moscow, 123182, Russia

    V. V. Malyshev & A. V. Pislyakov

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  1. V. V. Malyshev
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  2. A. V. Pislyakov
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Original Russian Text © V.V. Malyshev, A.V. Pislyakov, 2009, published in Zhurnal Analiticheskoi Khimii, 2009, Vol. 64, No. 1, pp. 99–110.

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Malyshev, V.V., Pislyakov, A.V. Metal oxide semiconductors based on tin dioxide: Gas-sensitivity to methane in a wide range of temperatures, concentrations and humidities of the gas phase. J Anal Chem 64, 90–100 (2009). https://doi.org/10.1134/S1061934809010171

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  • DOI: https://doi.org/10.1134/S1061934809010171

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