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Effect of doping method on the formation of charge-compensating defects in PbMoO4:Nd3+ crystals

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Abstract

PbMoO4:Nd3+ single crystals have been grown using different doping schemes. Their dielectric properties have been studied in the temperature range of 20–550°C at frequencies from 25 to 106 Hz. The activation energies of dielectric relaxation are determined for all samples, and the Nd3+ luminescence decay kinetics is studied. The most realistic models of activator centers in PbMoO4:Nd3+ crystals are proposed based on the optical and dielectric spectroscopy data.

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Authors and Affiliations

  1. Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov, 61001, Ukraine

    Yu. N. Gorobets, M. B. Kosmyna, B. P. Nazarenko, V. M. Puzikov & A. N. Shekhovtsov

  2. Scientific Research Company CARAT, Lviv, Ukraine

    A. P. Luchechko & D. Yu. Sugak

Authors
  1. Yu. N. Gorobets
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  2. M. B. Kosmyna
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  3. A. P. Luchechko
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  4. B. P. Nazarenko
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  5. V. M. Puzikov
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  6. D. Yu. Sugak
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  7. A. N. Shekhovtsov
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Correspondence to A. N. Shekhovtsov.

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Gorobets, Y.N., Kosmyna, M.B., Luchechko, A.P. et al. Effect of doping method on the formation of charge-compensating defects in PbMoO4:Nd3+ crystals. Crystallogr. Rep. 57, 962–966 (2012). https://doi.org/10.1134/S1063774512070073

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  • DOI: https://doi.org/10.1134/S1063774512070073

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