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Development of the Growth Technology of Highly Homogeneous Semiconductor Crystals

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Abstract

Different technological solutions for growing GaSb(Te) and Ge(Ga) single crystals, making it possible to optimize the growth of highly homogeneous (at the microlevel) semiconductor crystals by the Bridgman method, are described. The possibility of implementing steady-state growth conditions (providing uniform dopant distribution over the crystal) has been experimentally confirmed.

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Authors and Affiliations

  1. Space Materials Science Laboratory, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Kaluga Branch, Russian Academy of Sciences, Kaluga, 248640, Russia

    V. I. Strelov, I. A. Prokhorov, E. N. Korobeinikova, V. S. Sidorov & V. N. Vlasov

  2. Joint Stock Company “State Scientific Centre of the Russian Federation–Leypunsky Institute for Physics and Power Engineering,”, Obninsk, Kaluga oblast, 249033, Russia

    V. K. Artemyev

Authors
  1. V. I. Strelov
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  2. I. A. Prokhorov
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  3. E. N. Korobeinikova
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  4. V. S. Sidorov
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  5. V. N. Vlasov
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  6. V. K. Artemyev
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Corresponding author

Correspondence to E. N. Korobeinikova.

Additional information

Original Russian Text © V.I. Strelov, I.A. Prokhorov, E.N. Korobeinikova, V.S. Sidorov, V.N. Vlasov, V.K. Artemyev, 2018, published in Kristallografiya, 2018, Vol. 63, No. 2, pp. 307–310.

First Russian Crystallographic Congress

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Strelov, V.I., Prokhorov, I.A., Korobeinikova, E.N. et al. Development of the Growth Technology of Highly Homogeneous Semiconductor Crystals. Crystallogr. Rep. 63, 284–286 (2018). https://doi.org/10.1134/S1063774518020281

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  • DOI: https://doi.org/10.1134/S1063774518020281

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