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Study of model of self-coordinated growth of single crystals of sapphire by horizontal directed crystallization

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Abstract

On the basis of the model of the self-coordinated growth of sapphire (Al2O3) single crystals by the method of horizontal directed crystallization, formulas explaining the decrease in the growth rate with increasing the crystal thickness are derived. It is shown that a necessary intensity of latent-heat dissipation in the phase transition through the growing-crystal bulk should be provided to retain a constant growth rate. Estimates for conditions under which the passage to the bulk-crystallization growth can be observed and, as a result of which, the grown-crystal characteristics are greatly deteriorated are found.

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Authors and Affiliations

  1. Taganrog Institute of Technology, Southern Federal University, Taganrog, Russia

    S. P. Malyukov, B. A. Stefanovich & D. I. Cherednichenko

Authors
  1. S. P. Malyukov
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  2. B. A. Stefanovich
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  3. D. I. Cherednichenko
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Correspondence to D. I. Cherednichenko.

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Original Russian Text © S.P. Malyukov, B.A. Stefanovich, D.I. Cherednichenko, 2008, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2008, Vol. 42, No. 13.

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Malyukov, S.P., Stefanovich, B.A. & Cherednichenko, D.I. Study of model of self-coordinated growth of single crystals of sapphire by horizontal directed crystallization. Semiconductors 42, 1508–1511 (2008). https://doi.org/10.1134/S1063782608130113

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  • DOI: https://doi.org/10.1134/S1063782608130113

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