Abstract
A model of the density of states of single-sheet graphene is proposed. The model applies to both the energy region close to the Dirac point and the peripheral region. In the context of the model, the problem of adsorption is solved within an approximation that allows an analytical representation of the band contributions n b to the occupation numbers of an adatom n a . The amorphization-induced changes in the occupation numbers of alkali metal and halogen adatoms are estimated.
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Original Russian Text © S.Yu. Davydov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 3, pp. 382–387.
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Davydov, S.Y. Model of Adsorption on Amorphous Graphene. Semiconductors 50, 377–383 (2016). https://doi.org/10.1134/S1063782616030052
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DOI: https://doi.org/10.1134/S1063782616030052