Abstract
Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are optimized by mathematical simulation. Photovoltaic converters with areas of S = 10.2 and 12.2 mm2 and 4 cm2 are fabricated and studied. For photocells with S = 10.2 mm2, the monochromatic efficiency (η) was 60% at a current density of 5.9 A/cm2. A photovoltaic module with a working voltage of 4 V (η = 56.3% at 0.34 A/cm2) is assembled.
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Original Russian Text © V.P. Khvostikov, N.A. Kalyuzhnyy, S.A. Mintairov, S.V. Sorokina, N.S. Potapovich, V.M. Emelyanov, N.Kh. Timoshina, V.M. Andreev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 9, pp. 1242–1246.
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Khvostikov, V.P., Kalyuzhnyy, N.A., Mintairov, S.A. et al. Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures. Semiconductors 50, 1220–1224 (2016). https://doi.org/10.1134/S1063782616090128
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DOI: https://doi.org/10.1134/S1063782616090128