Abstract
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.
Similar content being viewed by others
References
C. A. Hurni, A. David, M. J. Cich, R. I. Aldaz, B. Ellis, K. Huang, and M. R. Krames, Appl. Phys. Lett. 106, 031101 (2015).
F. Nippert, S. Yu. Karpov, G. Callsen, B. Galler, T. Kure, C. Nenstiel, M. R. Wagner, M. Strassburg, H.-Ju. Lugauer, and A. Hoffmann, Appl. Phys. Lett. 109, 1611039 (2016).
M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. di Carlo, Phys. Rev. Lett. 116, 027401 (2016).
P. Marko, M. Menegini, S. Bychikhin, G. Meneghesso, and D. Pogany, Microelectron. Reliab. 52, 2194 (2012).
R. Lossy, H. Blanck, and J. Wurfl, Microelectron. Reliab. 52, 2144 (2012).
G. Pozina, R. Ciechonski, Zh. Bi, L. Samuelson, and B. Monemar, Appl. Phys. Lett. 107, 251106 (2015).
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, and Yu. N. Makarov, Semiconductors 50, 1173 (2016).
M. Binder, B. Galler, M. Furitsch, J. Off, J. Wagner, R. Zeisel, and S. Katz, Appl. Phys. Lett. 103, 221110 (2013).
M. Auf der Maur, B. Galler, I. Pietzonka, M. Strassburg, H. Lugauer, and A. di Carlo, Appl. Phys. Lett. 105, 133504 (2014).
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. S. Kogotkov, Yu. T. Rebane, M. V. Virko, and Yu. G. Shreter, Semiconductors 49, 827 (2015).
C. de Santi, M. Meneghini, M. la Grassa, B. Galler, R. Zeisel, M. Goano, S. Dominici, M. Mandurrino, F. Bertazzi, D. Robidas, G. Meneghesso, and E. Zanoni, J. Appl. Phys. 119, 094501 (2016).
S. Steingrube, O. Breitenstein, K. Ramspeck, S. Glunz, A. Schenk, and P. P. Altermatt, J. Appl. Phys. 110, 014515 (2011).
N. Shmidt, A. Usikov, E. Shabunina, A. Chernyakov, A. Sakharov, S. Kurin, A. Antipov, I. Barash, A. Roenkov, H. Helava, and Y. Makarov, Phys. Status Solidi C 12, 349 (2015).
N. M. Shmidt, A. S. Usikov, E. I. Shabunina, A. E. Chernyakov, A. V. Sakharov, S. Yu. Kurin, A. A. Antipov, I. S. Barash, A. D. Roenkov, Yu. N. Makarov, and H. Helava, Tech. Phys. Lett. 40, 574 (2014).
V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V.N.V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, and A. E. Chernyakov, Tech. Phys. Lett. 42, 701 (2016).
V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, W. V. Lundin, A. V. Sakharov, and A. F. Tsatsulnikov, J. Appl. Phys. 109, 073108 (2011).
A. E. Chernyakov, M. E. Levinshtein, N. A. Talnishnikh, E. I. Shabunina, and N. M. Shmidt, J. Cryst. Growth 401, 302 (2014).
L. Dobrzanski, J. Appl. Phys. 96, 4135 (2004).
G. P. Zhigal’skii, Fluctuations and Noise in Solid State Electronic Devices (Fizmatlit, Moscow, 2012), p. 512 [in Russian].
A. L. Zakgeim, M. E. Levinshtein, V. P. Petrov, A. E. Chernyakov, E. I. Shabunina, and N. M. Shmidt, Semiconductors 46, 208 (2012).
B. Lambert, N. Labat, D. Carisetti, L. Brunel, and M. Mermoux, Microelectron. Reliab. 52, 2184 (2012).
N. V. D’yakonova, M. E. Levinshtein, S. Contreras, W. Knap, B. Beaumont, and P. Gibart, Semiconductors 32, 257 (1998).
S. L. Rumyantsev, Y. Deng, E. Borovitskaya, A. Dmitriev, W. Knap, N. Pala, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, J. Yang, and X. Hu, J. Appl. Phys. 92, 4726 (2002).
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya.M. Parnes, S. I. Vidyakin, et al., Tech. Phys. Lett. 42, 1079 (2016).
D. V. Gromov and G. V. Chukov, Radiation Effect on Heterostructure Microwave Devices and Integral Schemes (Palamarium Academic, Saarbrücken, 2012), p. 91 [in Russian].
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.V. Emtsev, E.V. Gushchina, V.N. Petrov, N.A. Tal’nishnih, A.E. Chernyakov, E.I. Shabunina, N.M. Shmidt, A.S. Usikov, A.P. Kartashova, A.A. Zybin, V.V. Kozlovski, M.F. Kudoyarov, A.V. Saharov, A.G. Oganesyan, D.S. Poloskin, V.V. Lundin, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 7, pp. 804–811.
Rights and permissions
About this article
Cite this article
Emtsev, V.V., Gushchina, E.V., Petrov, V.N. et al. Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System. Semiconductors 52, 942–949 (2018). https://doi.org/10.1134/S1063782618070072
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782618070072