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Ranges of Hydrogen, Deuterium, and Helium Atoms in Amorphous Silicon and Tungsten

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Abstract

We have obtained the range distributions for H, D, and He atoms within an energy range of 0.1–100 keV in amorphous W and Si for the normal incidence of bombarding particles. Calculations have been performed both in the binary collision approximation and by a more accurate method of calculating particle trajectories. It is shown that the results of both methods are in good agreement with each other and with experimental data on the mean ranges for the H–Si system. The influence of the attracting well in the particle–solid interaction potential on the results of calculations is estimated.

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Funding

This study was performed under a State assignment of the Ministry of Education and Science of the Russian Federation for the Federal State Budget Scientific Enterprise Ioffe Institute, Russian Academy of Sciences.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    D. S. Meluzova, P. Yu. Babenko, A. P. Shergin & A. N. Zinoviev

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  1. D. S. Meluzova
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  2. P. Yu. Babenko
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  3. A. P. Shergin
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  4. A. N. Zinoviev
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Correspondence to D. S. Meluzova.

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Translated by N. Wadhwa

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Meluzova, D.S., Babenko, P.Y., Shergin, A.P. et al. Ranges of Hydrogen, Deuterium, and Helium Atoms in Amorphous Silicon and Tungsten. Tech. Phys. 65, 145–150 (2020). https://doi.org/10.1134/S106378422001017X

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  • DOI: https://doi.org/10.1134/S106378422001017X

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