Abstract
The dynamics of changes in the crystal structure and in the elemental and chemical composition of Si surface layers implanted with Na+, Rb+, and Cs+ ions in the process of stepwise annealing under different temperature conditions has been studied. It is shown that, on the surface implanted with Na+ ions, a NaSi2 film is formed after annealing it at a temperature of T = 900 K, a single-layer NaSi2 coating is formed at T = 1000 K and the surface and near-surface Si layers are completely cleansed of the atoms of the alloying element, oxygen, and carbon at T = 1100 K.
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Umirzakov, B.E., Isakhanov, Z.A., Allaerova, G.K. et al. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions. Tech. Phys. Lett. 47, 11–15 (2021). https://doi.org/10.1134/S1063785021010120
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DOI: https://doi.org/10.1134/S1063785021010120