Abstract.
We have investigated non-equilibrium electron transport properties of a quantum well with an inserted thin semi-insulating potential barrier layer in nonlinear bias using a time-dependent simulation technique. We find that the charge redistribution with time in the whole structure has an important effect on the final current-voltage (I-V) curves. The results show that there are two evident current hysteresis phenomena in the negative differential conductance regions and the inserted semi-insulating potential barrier layer induces the formation of multiple emitter quantum wells, which leads to high-frequency terahertz current oscillations with multiple-frequency relations around the valley of current.
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Dai, Z., Ni, J. Multiple-frequency current oscillations in GaAs-AlGaAs quantum wells containing a thin semi-insulating layer. Eur. Phys. J. B 47, 443–447 (2005). https://doi.org/10.1140/epjb/e2005-00345-6
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DOI: https://doi.org/10.1140/epjb/e2005-00345-6