Abstract.
Utilizing the state dependent projection technique, we derive a formula for intraband transition linewidths due to longitudinal optical phonon scattering for the electrons in a triangular potential well. We find for GaN that the absorption power is keenly affected by the screening in such a way that the power increases with the electron density. We also find that the linewidth increases with the temperature, but decreases with the electric field applied to the system.
Similar content being viewed by others
References
S. Komiyama, H. Eyferth, J.P. Kotthaus, J. Phys. Soc. Jpn. 49, Suppl. A, 687 (1980)
M. Yamada, Y. Suematsu, J. Appl. Phys. 52, 2653 (1981)
R.J. Nicholas, Prog. Quantum Electron. 10, 1 (1985)
E. Zielinski, H. Schweizer, S. Hausser, R. Stuber, M. Pilkuhn, G. Weimann, IEEE J. Quantum Electron QE-23, 969 (1987)
N. Suzuki, N. Iizuka, Jpn J. Appl. Phys. 36, L1006 (1992)
W. Xu, F.M. Peeters, J.T. Devreese, Phys. Rev. B 48, 1562 (1993)
N. Kim, S.J. Lee, T.W. Kang, K.S. Yi, G. Ihm, J. Korean Phys. Soc. 39, 1050 (2001)
X.P. Bai, S.L. Ban, Eur. Phys. J. B 58, 31 (2007)
Z.P. Wang, X.X. Liang, X. Wang, Eur. Phys. J. B 59, 41 (2007)
S. Badjou, P.N. Argyres, Phys. Rev. B 35, 5964 (1987)
N.L. Kang, Y.J. Cho, S.D. Choi, Progr. Theor. Phys. 96, 307 (1996)
H.J. Lee, N.L. Kang, J.Y. Sug, S.D. Choi, Phys. Rev. B 65, 195113 (2002)
N.L. Kang, J.Y. Ryu, S.D. Choi, J. Phys. Condens. Mater 14, 9733 (2002)
F. Bernordini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B 56, R10024 (1997)
N. Suzuki, N. Iizuka, Jpn J. Appl. Phys. 38, L363 (1999)
H.-S. Kwack, Y.-H. Cho, S.B. Bae, D.K. Oh, K.-S. Lee, C.S. Kim, J. Korean Phys. Soc. 46, 1137 (2005)
K.-S. Lee, J. Korean Phys. Soc. 49, 209 (2006)
A. Goswami, Quantum Mechanics (Wm.C. Brown Publishers, 1992), Chap. 8
J.H. Davies, The Physics of Low-Dimensional Semiconductors (Cambridge University Press, 1998), Chap. 7
C.M. Wolf, G.E. Stillman, Physical Properties of Semiconductors (Prentice-Hall, Englewood Cliffs, New Jersey, 1989)
D.K. Ferry, Semiconductors (MacMillan, New York, 1991)
A.L. Chung, Physics of Optoelectronics Devices (Wiley, New York, 1995)
N.L. Kang, J.Y. Ryu, S.D. Choi, J. Phys. Soc. Jpn 67, 2439 (1998)
M. Yamada, Y. Suematsu, J. Appl. Phys. 52, 2653 (1981)
M. Asada, Y. Suematsu, IEEE J. Quantum Electron. QE-21, 434 (1985)
H. Haug, S.W. Koch, Phys. Rev. A 39, 1887 (1989)
M. Yamanishi, Y. Lee, IEEE J. Quantum Electron. QE-23, 367 (1987)
M. Asada, Quantum Well Lasers, edited by P.S. Zory Jr. (CA: Academic, San Diego, 1993), Chap. 2
P. Rees, P. Blood, IEEE J. Quantum Electron. 31, 1047 (1995)
A. Tomita, A. Suzuki, IEEE J. Quantum Electron. 27, 1630 (1991)
D. Ahn, Prog. Quant. Electr. 21, 249 (1997)
S.H. Park, S.L. Chuang, J. Minch, D. Ahn, Semicond. Sci. Technol. 15, 203 (2000)
W.W. Chow, S.W. Koch, Appl. Phys. Lett. 66, 3004 (1995)
D. Ahn, Appl. Phys. Lett. 69, 2498 (1996)
A. Tomita, Phys. Rev. B 54, 5609 (1996)
Quantum-based Electronic Devices and Systems, edited by M. Dutta, H.L. Stroscio (World Scientific, New Jersey, 1998)
V.V. Mitin, V.A. Kochelap, M.A. Stroscio, Quantum Heterostructures: Microelectronics and Optoelectronics (Cambridge Univ. Press, Cambridge, 1999)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kang, N., Lee, H., Lee, S. et al. Theory of intraband transition linewidths due to LO phonon scattering in triangular well based on the many body projection method. Eur. Phys. J. B 63, 59–63 (2008). https://doi.org/10.1140/epjb/e2008-00214-x
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1140/epjb/e2008-00214-x