Abstract.
In this paper, the theoretical investigation of giant Kerr nonlinearity based on biexciton coherence in GsAs multiple quantum wells with 17.5 nm GaAs wells and 15nm Al0.3Ga0.7 barriers is presented. The destructive quantum interference in this configuration is set up by two continuous wave control fields that couple to a biexciton state. It is shown that nonlinear susceptibilities of two weak probe and signal fields can be controlled by exciton spin relaxation and biexciton coherence which resulted from many-particle Coulomb interactions in semiconductors. It is found that the exciton spin relaxation can enhance the Kerr coefficient in the absence of probe absorption. We hope that our proposed method could be helpful for the next generation of all-optical systems based on quantum coherence and interference in semiconductor nanostructures.
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Asadpour, S., Soleimani, H. Enhanced Kerr nonlinearity with nonlinear amplification based biexciton coherence. Eur. Phys. J. Plus 130, 18 (2015). https://doi.org/10.1140/epjp/i2015-15018-4
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DOI: https://doi.org/10.1140/epjp/i2015-15018-4