Abstract
We have studied the carrier transport in regio-regular polythiophene field effect transistors (FETs) by four-probe measurements of the steady-state channel conductance from room temperature to 4.2 K. At high gate voltage (constant total carrier density, n = 5×1012 cm−2) and at low temperatures, we demonstrate that the gate voltage and source-drain voltage combine to induce the insulator-to-metal transition. In the insulating regime, the carrier transport is well described by phonon assisted hopping in a disordered Fermi Glass (with Coulomb interactions between the hopping charge carrier and the charge left behind). At the highest gate voltages and at sufficiently high source-drain voltages, the data imply a zero-temperature transition from disordered insulator to metal.
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Anoop, S.D., Wang, G., Moses, D. et al. Hopping Transport and Voltage Induced Metal-Insulator Transition in Polythiophene Field Effect Transistors. MRS Online Proceedings Library 937, 0937-M10-24 (2006). https://doi.org/10.1557/PROC-0937-M10-24
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DOI: https://doi.org/10.1557/PROC-0937-M10-24